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    CNTFET full-adders for energy-efficient arithmetic applications

    , Article 6th International Conference on Computing, Communications and Networking Technologies, 13 July 2015 through 15 July 2015 ; 2015 ; 9781479979844 (ISBN) Grailoo, M ; Hashemi, M ; Haghshenas, K ; Rezaee, S ; Rapolu, S ; Nikoubin, T ; University of North Texas ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc 
    Abstract
    In this paper, we present two energy-efficient full adders (FAs) which are a crucial building block of nano arithmetic logic units (nano-ALUs) with the Cell Design Methodology (CDM). Since the most suitable design configuration for CNT-based ICs is pass transistor configuration (PTL), CDM which properly benefits from PTL advantages is utilized. So the designs herewith take full advantages of simplicity, fewer transistors and better immunity against threshold voltage fluctuations of the PTL than the CCMOS configuration. CDM also resolves two problems of PTL by employing elegant mechanisms which are threshold voltage drop and loss of gain. Using the amend mechanisms and SEA sizing algorithm... 

    Wireless interfacing to cortical neural recording implants using 4-FSK modulation scheme

    , Article IEEE International Conference on Electronics, Circuits, and Systems, 6 December 2015 through 9 December 2015 ; Volume 2016 March , 2016 , Pages 221-224 ; 9781509002467 (ISBN) Eslampanah Sendi, M. S ; Judy, M ; Molaei, H ; Sodagar, A. M ; Sharifkhani, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc 
    Abstract
    This paper used a 4-level frequency shift keying (4-FSK) modulation scheme to enhance the density of wireless data transfer from implantable biomedical microsystems to the outside world. Modeling and simulation of the wireless channel for 4-FSK modulation in the case of a neural recording implant has been done. To realize the 4-FSK scheme, the modulator and demodulator circuits are proposed, designed and simulated in a 0.18-μm CMOS process, and in the 174-216 MHz frequency band at a data rate of 13.5 Mbps. Operated using a 1.8 V supply voltage, the modulator circuit consumes a power of 7.8 μW  

    PEAF: A power-efficient architecture for SRAM-based fpgas using reconfigurable hard logic design in dark silicon era

    , Article IEEE Transactions on Computers ; Volume 66, Issue 6 , 2017 , Pages 982-995 ; 00189340 (ISSN) Ebrahimi, Z ; Khaleghi, B ; Asadi, H ; Sharif University of Technology
    IEEE Computer Society  2017
    Abstract
    Significant increase of static power in nano-CMOS era and, subsequently, the end of Dennard scaling has put a Power Wall to further integration of CMOS technology in Field-Programmable Gate Arrays (FPGAs). An efficient solution to cope with this obstacle is power gating inactive fractions of a single die, resulting in Dark Silicon. Previous studies employing power gating on SRAM-based FPGAs have primarily focused on using large-input Look-up Tables (LUTs). The architectures proposed in such studies inherently suffer from poor logic utilization which limits the benefits of power gating techniques. This paper proposes a Power-Efficient Architecture for FPGAs (PEAF) based on combination of... 

    The field effect transistor DNA biosensor based on ITO nanowires in label-free hepatitis B virus detecting compatible with CMOS technology

    , Article Biosensors and Bioelectronics ; Volume 105 , 15 May , 2018 , Pages 58-64 ; 09565663 (ISSN) Shariati, M ; Sharif University of Technology
    Elsevier Ltd  2018
    Abstract
    In this paper the field-effect transistor DNA biosensor for detecting hepatitis B virus (HBV) based on indium tin oxide nanowires (ITO NWs) in label free approach has been fabricated. Because of ITO nanowires intensive conductance and functional modified surface, the probe immobilization and target hybridization were increased strongly. The high resolution transmission electron microscopy (HRTEM) measurement showed that ITO nanowires were crystalline and less than 50 nm in diameter. The single-stranded hepatitis B virus DNA (SS-DNA) was immobilized as probe on the Au-modified nanowires. The DNA targets were measured in a linear concentration range from 1fM to 10 µM. The detection limit of... 

    High speed and low cost synchronous counter design in quantum-dot cellular automata

    , Article Microelectronics Journal ; Volume 73 , March , 2018 , Pages 1-11 ; 00262692 (ISSN) Sangsefidi, M ; Abedi, D ; Yoosefi, E ; Karimpour, M ; Sharif University of Technology
    Elsevier Ltd  2018
    Abstract
    Quantum-dot Cellular Automata (QCA) is a very interesting nano-scale technology. Extremely small feature size and ultra-low power consumption are the most important features of QCA compared to CMOS. Counters are considered as one of the most fundamental components in sequential circuits. Previous QCA synchronous counters (QSCs) have been designed and simulated using two methods. In the first method, QSCs utilize direct mapping flip-flop designs in CMOS technology to QCA. In the second method, QSCs are designed with the inherent capability of QCA technology. Despite being attractive, mentioned approaches have constraints (i.e. long wire length and area issues). In this brief, design and... 

    A fully linear 5.2 GHz - 5.8 GHz digitally controlled oscillator in 65-nm CMOS technology

    , Article Microelectronics Journal ; Volume 90 , 2019 , Pages 48-57 ; 00262692 (ISSN) Heydarzadeh, S ; Torkzadeh, P ; Sadughi, S ; Sharif University of Technology
    Elsevier Ltd  2019
    Abstract
    A low-power fully linear integrated CMOS LC-based Digitally Controlled Oscillator is presented. The DCO operates in 5.2 GHz to 5.8 GHz range for using in IEEE 802.11a wireless applications. The system has been designed using 65 nm CMOS technology and 1.2 V supply voltage. By applying a proposed filter in DCO architecture −133.41 dBc/Hz phase noise at 1 MHz offset frequency from the fundamental carrier is achieved. The code generator and digital to analog converter designed to provide the high precision voltage required for fine-tuning. The output frequency swept through 10 control bits with 100 KHz resolution. The measured RMS jitter (∑ [1 KHz – 2 GHz]) from 5.8 GHz carrier is 1.65 fs. The... 

    A fully analog calibration technique for phase and gain mismatches in image-reject receivers

    , Article AEU - International Journal of Electronics and Communications ; Volume 69, Issue 5 , May , 2015 , Pages 823-835 ; 14348411 (ISSN) Nikoofard, A ; Kananian, S ; Fotowat Ahmady, A ; Sharif University of Technology
    Elsevier GmbH  2015
    Abstract
    A systematic approach to I/Q mismatch calibration in image-reject receivers is presented in this paper. A new error detection algorithm is proposed, which automatically calibrates for phase and gain mismatches limiting the performance of image-reject receivers. A dual-loop feedback is employed which looks for the minimum phase/gain error using a 2-dimensional analog-based search algorithm and then finds the minimum value for the error. An experimental CMOS prototype RF front-end for cognitive radio applications operating at 400-800 MHz is proposed and simulated in the 0.18 μm CMOS technology, achieving an image rejection ratio (IRR) better than 55-dB in post-layout simulation. The... 

    Analysis and design of a DC to 18 GHz 6-bit attenuator with simultaneous phase and gain error correction

    , Article AEU - International Journal of Electronics and Communications ; Volume 110 , 2019 ; 14348411 (ISSN) Ahmadikia, A ; Karami, P ; Atarodi, S. M ; Sharif University of Technology
    Elsevier GmbH  2019
    Abstract
    In this paper the design of a digital step attenuator with simultaneous low phase and gain error characteristics is investigated. First, the loading effect of the consecutive blocks of an N-bit attenuator on the precision of the attenuation levels is analyzed. Then a modified structure to decrease the loading effect as well as the phase error of the attenuator blocks is presented. A comprehensive analysis of the circuit is performed and some design guidelines have described. Finally, a 6-bit attenuator with attenuation range of 0.5–31.5 dB and resolution of 0.5 dB is implemented in 0.18 µm complementary metal–oxide-semiconductor (CMOS) technology. The root mean square (RMS) gain error and... 

    A reconfigurable highly-linear CMOS transceiver core chip for X-band phased arrays

    , Article AEU-International Journal of Electronics and Communications ; Volume 114 , February , 2020 Meghdadi, M ; Lotfi, H ; Medi, A ; Sharif University of Technology
    Elsevier GmbH  2020
    Abstract
    This paper presents a highly-linear transceiver core chip for X-band phased-array systems with two RX and one TX channels. Implemented in a standard 0.18-μm CMOS technology, the core chip provides 6-bit phase control (with rms error <2°) and 6-bit gain control (with rms error <0.6 dB) both within the 8.5–11.5 GHz frequency band. Improved accuracy is also available by digital calibration in narrowband applications. The receivers achieve a gain of 13.5 dB, an IIP3 of +10.3 dBm, and a noise figure of 8.2 dB, while drawing 170 mA per channel from the 3.3 V supply. The chip also provides an additional low-gain mode which further enhances IIP3 to +19.1 dBm and the input-referred P1dB to +11.4 dBm.... 

    A 7 bit, 3 GHz bandwidth random-time-interleaved-hybrid DAC using a novel self-healing structure for DCE in 65 nm CMOS technology

    , Article AEU - International Journal of Electronics and Communications ; Volume 134 , 2021 ; 14348411 (ISSN) Sariri, H ; Torkzadeh, P ; Sadughi, S ; Sharif University of Technology
    Elsevier GmbH  2021
    Abstract
    The application of time-interleaved structure leads to new amplitude and time errors while reducing many static and dynamic errors. In this case, both amplitude and time error are decreased by circuit structures integrated into a 7-bit DAC. In the present study, a new structure was proposed based on the randomization of two-interleaved paths in order to reduce the amplitude error, which can be extended to the N-channels-interleaved. In order to reduce the cycle-duty-error, a self-correction structure based on calculating the amplitude of the error before and measuring the time of this error along with the passage of the main signal through the output multiplexer is provided. The advantage of... 

    A 70 pJ/b configurable 64-QAM soft MIMO detector

    , Article Integration ; Volume 63 , 2018 , Pages 74-86 ; 01679260 (ISSN) Shabany, M ; Patel, D ; Milicevic, M ; Mahdavi, M ; Gulak, P. G ; Sharif University of Technology
    Elsevier B.V  2018
    Abstract
    An area and power efficient high-throughput VLSI implementation of a 4 × 4, 64-QAM soft multiple-input-multiple-output (MIMO) detector, that is suitable for high-order constellation schemes is presented. The proposed MIMO detector utilizes information contained in the discarded paths to improve the bit-error-rate (BER) performance, and then reduces computational complexity using three innovative improvement ideas. The proposed design is fabricated and fully tested in a 130 nm CMOS technology. Operating with a 270 MHz clock, the design achieves up to 655 Mbps throughput with 195 mW power dissipation at 1.32 V supply. Synthesis results in 65 nm CMOS technology shows that the proposed... 

    A novel design methodology for low-noise and high-gain transimpedance amplifiers

    , Article Proceedings of the 2014 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2014 ; 2014 , pp. 77-82 ; ISBN: 9789871907861 Shahdoost, S ; Medi, A ; Bozorgzadeh, B ; Saniei, N ; Sharif University of Technology
    Abstract
    This paper reports on design and measurement results of a state of the art low-noise and high-gain transimpedance amplifier (TIA) implemented in 0.18 μm TSMC CMOS technology. Thorough design methodology for high gain and low power TIA design for 2.5 Gb/s optical communication circuits family is presented. A noiseless capacitive feedback is proposed and implemented as a noise efficient feedback network for TIA circuits. Besides, analytical noise calculations in this family of TIA circuits are presented and optimum noise criteria are derived. The saturation and instability problem of TIA circuits resulted from DC dark current of the input photodiodes (PDs) is addressed and a circuit level... 

    A low-power 10-Bit 40-MS/s pipeline ADC using extended capacitor sharing

    , Article Proceedings - IEEE International Symposium on Circuits and Systems ; 1- 5 June , 2014 , pp. 1147-1150 ; ISSN: 02714310 Esmaeelzadeh, H ; Sharifkhani, M ; Shabany, M ; Sharif University of Technology
    Abstract
    This paper describes a new capacitor sharing technique for pipeline ADCs. It enables power reduction of the first and second MDACs simultaneously. The presented noise and power analysis shows that the proposed method is about 30% more efficient than the conventional one in terms of the first and second MDACs power dissipation. A 10-bit 40MS/s pipeline ADC employing the proposed technique was designed in 90-nm CMOS technology achieving a power consumption of 4.2 mW  

    A tunable high-Q active inductor with a feed forward noise reduction path

    , Article Scientia Iranica ; Volume 21, Issue 3 , 2014 , Pages 945-952 ; ISSN: 10263098 Moezzi, M ; Bakhtiar, M. S ; Sharif University of Technology
    Abstract
    The analysis and design of a tunable low noise active inductor is presented. The noise performance of the proposed gyrator-based active inductor is improved without either degrading its quality factor or consuming more power using a linear Feed Forward Path (FFP). The proposed low noise active inductor has been designed and fabricated using standard 0.18-μm CMOS technology. The measurements show a 3 fold improvement in the input noise current compared to that of conventional active inductors. The active inductor was tuned and measured at the resonance frequency of 2.5 GHz, which could be extended as high as 5.5 GHz, with a quality factor of 30. The circuit draws 4.8 mA from a 1.8 V supply  

    Design method for a reconfigurable CMOS LNA with input tuning and active balun

    , Article AEU - International Journal of Electronics and Communications ; Vol. 69, issue. 1 , January , 2014 , p. 424-431 Akbar, F ; Atarodi, M ; Saeedi, S ; Sharif University of Technology
    Abstract
    A method to design a tunable low noise amplifier (LNA) for multiband receivers is proposed. This paper also presents a single-ended to differential conversion (S2DC) topology which improves the LNA linearity without degrading its noise performance. Combining input tuning with S2DC in a single stage reduces power consumption of the LNA and decreases effects of supply noise. An LNA has been designed based on the proposed method for 2.3-4.8 GHz in a 0.18 μm CMOS technology. Simulations show an IIP3 of -3.2 dBm, a less than 3.7 dB noise figure (NF), a voltage gain of 24 dB in the whole frequency range. The LNA draws 13.1 mW from a 1.8 V supply. The results indicate that the proposed tuning... 

    An auto-calibrated, dual-mode SRAM macro using a hybrid offset-cancelled sense amplifier

    , Article Microelectronics Journal ; Vol. 45, issue. 6 , 2014 , p. 781-792 Attarzadeh, H ; Sharifkhani, M ; Sharif University of Technology
    Abstract
    A dual-mode power and performance optimized SRAM is presented. Given the fact that the power and speed associated with the cell access time are directly related to the sense amplifier offset a new optimization platform based on the hybrid offset-cancelled current sense amplifier (OCCSA) [1] is presented. It is shown that the speed and power overhead of the offset cancellation can be optimized in a multi-variable auto-calibration loop to achieve the lowest power or the highest performance mode. The flexibility of having two degrees of freedom in OCCSA offers a significant bitline delay reduction with minimum power sacrifice in the high performance mode. The proposed scheme is verified using a... 

    Two-dimensional multi-parameter adaptation of noise, linearity, and power consumption in wireless receivers

    , Article IEEE Transactions on Circuits and Systems I: Regular Papers ; Vol. 61, issue. 8 , July , 2014 , p. 2433-2443 Meghdadi, M ; Sharif Bakhtiar, M ; Sharif University of Technology
    Abstract
    This paper presents a general method for real-time adaptation of wireless receivers according to the prevailing reception conditions. In order to maintain the desired signal quality at the minimum possible power dissipation, the method performs an optimal trade-off between noise, linearity, and power consumption in the building blocks of the receiver. This is achieved by continuously monitoring the signal-to-noise plus interference ratio (SNIR) and accordingly tuning the adaptation parameters embedded in the receiver design. A prototype DVB-H receiver chip, implemented in a standard 0.18-μ m CMOS process, is used as the test vehicle. By properly trading noise with linearity in the receiver,... 

    A 90 nm-CMOS IR-UWB BPSK transmitter with spectrum tunability to improve peaceful UWB-narrowband coexistence

    , Article IEEE Transactions on Circuits and Systems I: Regular Papers ; Vol. 61, issue. 6 , January , 2014 , p. 1836-1848 ; 15498328 Mir-Moghtadaei, S. V ; Fotowat-Ahmady, A ; Nezhad, A. Z ; Serdijn, W. A ; Sharif University of Technology
    Abstract
    A new ultra wideband (UWB) pulse generator covering a-10 dB bandwidth of 2.4-4.6 GHz with a tunable center frequency of 5-5.6 GHz to mitigate coexistence issues of impulse radio UWB (IR-UWB) systems and IEEE802.11.a WLAN or other narrowband (NB) systems in 90 nm-CMOS technology is proposed. The UWB pulse is generated based on frequency up-conversion of the first derivative of the Gaussian pulse, which creates an adjustable null in the frequency spectrum. Simulation results show that employing the proposed pulse generator mitigates the mutual interference between UWB and WLAN systems, significantly. The proposed transmitter consists of a low frequency signal generator, an LC oscillator and a... 

    A subthreshold symmetric SRAM cell with high read stability

    , Article IEEE Transactions on Circuits and Systems II: Express Briefs ; Vol. 61, issue. 1 , Jan , 2014 , p. 26-30 ; 15497747 Saeidi, R ; Sharifkhani, M ; Hajsadeghi, K ; Sharif University of Technology
    Abstract
    This brief introduces a differential eight-transistor static random access memory (SRAM) cell for subthreshold SRAM applications. The symmetric topology offers a smaller area overhead compared with other symmetric cells for the same stability in the read operation. Two transistors isolate the cell storage nodes from the read operation path to maintain the data stability of the cell. This topology improves the data stability at the expense of read operation delay. Thorough postlayout Monte Carlo worst corner simulations in 45-nm CMOS technology are conducted. The proposed cell operates down to 0.35 V with a read noise margin of 74 mV and a write noise margin of 92 mV. Under this condition,... 

    12 bits, 40MS/s, low power pipelined SAR ADC

    , Article Midwest Symposium on Circuits and Systems ; Aug , 2014 , p. 841-844 Khojasteh Lazarjan, V ; Hajsadeghi, K ; Sharif University of Technology
    Abstract
    This paper presents a low power SAR ADC utilizing pipelining to increase the resolution up to 12 bits while maintaining a high speed sampling rate. Novel system level modifications and also new comparator architecture are proposed to optimize the power consumption. The ADC is designed and simulated in 0.18um CMOS technology by 1.2v supply voltage consuming 4.5mW power at 40MS/s sampling rate. The results indicates an effective number of bits (ENOB) of 11.04 bit and a challenging FOM of 54.9 fj/conversion which verifies the competence of proposed method