Loading...
Search for: green-s-function
0.013 seconds

    Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 86 , 2017 , Pages 175-183 ; 13869477 (ISSN) Majidi, D ; Faez, R ; Sharif University of Technology
    Elsevier B.V  2017
    Abstract
    In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in... 

    SN transport method for neutronic noise calculation in nuclear reactor systems: comparative study between transport theory and diffusion theory

    , Article Annals of Nuclear Energy ; Volume 114 , 2018 , Pages 236-244 ; 03064549 (ISSN) Bahrami, M ; Vosoughi, N ; Sharif University of Technology
    Elsevier Ltd  2018
    Abstract
    In this paper, the neutron noise based on transport theory and diffusion noise theory using Green's function technique is calculated. As the neutron noise is used for core diagnostic, surveillance and monitoring, calculation of neutron noise precisely can play an important role in monitoring and safety. We compare the accuracy of Green's function based on transport and diffusion theory in order to survey the differences between these theories. In this study some deviation between results obtained two theories are observed, and the impact of dimensions, cross sections and frequency on the results investigated. © 2017  

    3D elastodynamic fields of non-uniformly coated obstacles: Notion of eigenstress and eigenbody-force fields

    , Article Mechanics of Materials ; Volume 41, Issue 9 , 2009 , Pages 989-999 ; 01676636 (ISSN) Shodja, H. M ; Delfani, M. R ; Sharif University of Technology
    2009
    Abstract
    Based on wave-function expansion, the time harmonic wave scattered by a circular and spherical inhomogeneity has been studied by numerous investigators. This method has also been employed to axisymmetrically coated circular and spherical inhomogeneities by some authors. When the geometry of the obstacle is not axisymmetric, the wave-function expansion is no longer applicable. In this paper, it is proposed to employ the dynamic equivalent inclusion method (DEIM) which is more general than the methods presented in the literature. It will be seen that DEIM may be used to treat a wide range of situations in a unified manner and is not bound to certain symmetries. The DEIM was first proposed by... 

    Effect of Stone-Wales defect on an armchair graphene nanoribbon-based photodetector

    , Article Superlattices and Microstructures ; Volume 130 , 2019 , Pages 127-138 ; 07496036 (ISSN) Gholami Rudi, S ; Faez, R ; Moravvej Farshi, M. K ; Saghafi, K ; Sharif University of Technology
    Academic Press  2019
    Abstract
    The effect of Stone-Wales (SW) defect on the performance of an armchair graphene nanoribbon (AGNR)-based photodetector is studied. To model the SW defect two new tight-binding (TB) parameters are proposed that provide results that are in good agreement with density functional theory calculations. SW defect is introduced in different locations in the channel of the AGNR detector and the photocurrent, quantum efficiency and responsivity of defected structures are calculated using TB approximation and non-equilibrium Green's function formalism. By inspecting the photo-generated hole density in different points of the channel, the way that photocurrent is affected by SW defect in different... 

    Computational study of spin caloritronics in a pristine and defective antimonene nanoribbon

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 120 , 2020 Hashemi, S ; Faez, R ; Darvish, G ; Sharif University of Technology
    Elsevier B.V  2020
    Abstract
    In this paper, by using first-principle density functional theory (DFT) combined with non-equilibrium Green's function (NEGF), thermally induced spin current in zigzag and armchair Antimonene Nanoribbon (SbNR) is investigated. Also, we obtain higher spin current in Armchair nanoribbon (ANR) than zigzag nanoribbon (ZNR), because the start energy of transmission for ANR is closer to the Fermi level than ZNR. The results show that the device has a perfect spin Seebeck effect under temperature difference without gate voltage or bias voltage. For the ANR configuration, the competition between spin up holes and spin down electrons leads to negative differential behavior of charge current, which is... 

    Local excitation of a perfectly conducting slab with finite or infinite number of slits and the role of proper complex waves

    , Article IEEE Transactions on Antennas and Propagation ; Volume 68, Issue 8 , 2020 , Pages 6154-6161 Sheikh Ansari, A ; Rejaei, B ; Memarian, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2020
    Abstract
    The physics and modes of radiation in structures exhibiting extraordinary transmission (ET) can be best studied using Green's function formalism. In this article, we find the electromagnetic response to local excitation of a canonical structure exhibiting ET, and investigate the role of complex waves. The structure is a perfectly conducting slab having a finite or infinite number of through-slits. The solution breaks up the field into even and odd modes, and solves for the fields of the structure with a finite number of slits, by setting up an integral equation. The solution is then extended to find Greens' function of the infinitely periodic structure. The dispersion relations of the... 

    Closed-form approximation and numerical validation of the influence of van der Waals force on electrostatic cantilevers at nano-scale separations

    , Article Nanotechnology ; Volume 19, Issue 1 , 2008 ; 09574484 (ISSN) Ramezani, A ; Alasty, A ; Akbari, J ; Sharif University of Technology
    2008
    Abstract
    In this paper the two-point boundary value problem (BVP) of the cantilever deflection at nano-scale separations subjected to van der Waals and electrostatic forces is investigated using analytical and numerical methods to obtain the instability point of the beam. In the analytical treatment of the BVP, the nonlinear differential equation of the model is transformed into the integral form by using the Green's function of the cantilever beam. Then, closed-form solutions are obtained by assuming an appropriate shape function for the beam deflection to evaluate the integrals. In the numerical method, the BVP is solved with the MATLAB BVP solver, which implements a collocation method for... 

    Theoretical study of the electron transport through the cysteine amino acid nanomolecular wire

    , Article International Journal of Nanoscience ; Volume 7, Issue 2-3 , 2008 , Pages 95-102 ; 0219581X (ISSN) Ganji, M. D ; Aghaie, H ; Gholami, M. R ; Sharif University of Technology
    World Scientific Publishing Co. Pte Ltd  2008
    Abstract
    In this paper, we study the electrical transport and Negative Differential Resistance (NDR) in a single molecular conductor consisting of a cysteine sandwiched between two Au(111) electrodes via the Density Functional Theory-based Nonequilibrium Green's Function (DFT-NEGF) method. We show that (surprisingly, despite their apparent simplicity, these Au/cysteine/Au nanowires are shown to be a convenient NDR device) the smallest two-terminal molecular wire can exhibit NDR behavior to date. Experiments with a conventional or novel self-assembled monolayer (SAM) are proposed to test these predictions. The projected density of states (PDOSs) and transmission coefficients T(E) under various... 

    Influence of van der Waals force on the pull-in parameters of cantilever type nanoscale electrostatic actuators

    , Article 8th Biennial ASME Conference on Engineering Systems Design and Analysis, ESDA2006, Torino, 4 July 2006 through 7 July 2006 ; Volume 2006 , 2006 ; 0791837793 (ISBN); 9780791837795 (ISBN) Ramezani, A ; Akbari, J ; Alasty, A ; Sharif University of Technology
    2006
    Abstract
    In this paper, the influence of the van der Waals force on two main parameters describing an instability point of cantilever type nanomechanical switches, which are the pull-in voltage and deflection are investigated by using a distributed parameter beam model. The nonlinear differential equation of the model is transformed into the integral form by using the Green's function of the cantilever beam. The integral equation is solved analytically by assuming an appropriate shape function for the beam deflection. The detachment length and the minimum initial gap of the cantilever type switches are given, which are the basic design parameters for NEMS switches. The pull-in parameters of... 

    Parametrically excited vibration of a timoshenko beam on random viscoelastic foundation jected to a harmonic moving load

    , Article Nonlinear Dynamics ; Volume 45, Issue 1-2 , 2006 , Pages 75-93 ; 0924090X (ISSN) Younesian, D ; Kargarnovin, M. H ; Thompson, D. J ; Jones, C. J. C ; Sharif University of Technology
    2006
    Abstract
    The vibration response of a Timoshenko beam supported by a viscoelastic foundation with randomly distributed parameters along the beam length and jected to a harmonic moving load, is studied. By means of the first-order two-dimensional regular perturbation method and employing appropriate Green's functions, the dynamic response of the beam consisting of the mean and variance of the deflection and of the bending moment are obtained analytically in integral forms. Results of a field measurement for a test track are utilized to model the uncertainty of the foundation parameters. A frequency analysis is carried out and the effect of the load speed on the response is studied. It is found that the... 

    Coherent conductance in an alternating dot: Exact results

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 27, Issue 1-2 , 2005 , Pages 227-234 ; 13869477 (ISSN) Mardaani, M ; Esfarjani, K ; Sharif University of Technology
    2005
    Abstract
    In this paper we have calculated the conductance of a periodic quantum dot attached to metallic leads, within the tight-binding (TB) model and in the ballistic regime. We have calculated the Green's function (GF), density of states (DOS) and the coherent transmission coefficient (TC) fully analytically for an alternating quantum dot (A-QD). The quasi-gap, bound states energies, the energy and dot-size dependence of the GF and conductance for the system are also derived. Finally, we show analytically the conductance can be switched between insulating (OFF) and conducting (ON) states by applying a gate voltage. © 2004 Elsevier B.V. All rights reserved  

    Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

    , Article Superlattices and Microstructures ; Volume 97 , 2016 , Pages 28-45 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2016
    Abstract
    In this paper, some important circuit parameters of a monolayer armchair graphene nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also, these structures are Ideal with no defect, 1SVGNRFET with one single vacancy defect, and 3SVsGNRFET with three SV defects. Moreover, the circuit parameters are extracted based on Semi Classical Top of Barrier Modeling (SCTOBM) method. The I-V characteristics simulations of Ideal GNRFET, 1SVGNRFET and 3SVsGNRFET are used for comparing with SCTOBM method. These simulations are solved with Poisson-Schrodinger equation self-consistently by using Non- Equilibrium Green Function (NEGF) and in the real space approach. The... 

    Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure

    , Article Superlattices and Microstructures ; Volume 110 , 2017 , Pages 305-312 ; 07496036 (ISSN) Bajelan, F ; Yazdanpanah Goharrizi, A ; Faez, R ; Darvish, G ; Sharif University of Technology
    Abstract
    The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be the OFF-state current. In the present work, the OFF-state current of such devices is decreased by choosing channel materials with a large band gap and heavy effective mass. Our simulation results show that the OFF-state current of JL transistors with p-type GaAs is less than that of n-type GaAs. Plus, the heterostructure (HES) channel is proposed in this study for improving the device characteristics of JL-FETs as compared to homostructure... 

    Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

    , Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 127-129 ; 9781424417285 (ISBN) Dehdashti, N ; Orouji, A. A ; Faez, R ; Sharif University of Technology
    2007
    Abstract
    Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated. © 2007 IEEE  

    Improvement and Expansion of Characteristic Green’s Function-Complex Images Method for Extraction of Green’s Function of Finite Dielectric Structures

    , Ph.D. Dissertation Sharif University of Technology Torabi, Abdorreza (Author) ; Shishegar, Amir Ahmad (Supervisor) ; Faraji-Dana, Reza (Co-Advisor)
    Abstract
    Finite dielctric structures are commonly used in optical devices, Microwave Integrated Circuitc (MICs) and printed antennas. To analyze these structures, full-wave analysis methods cannot be employed easily. They need huge computer resources and are time-consuming especially for electrically large structures. On the other hand, asymptotic techniques may not be exact enough for these structures. In this thesis, MPIE technique is chosen as an accurate and efficient technique for analyzing these structres. To use this technique, the magnetic vector potential and electric scalar potential are required. Uniform and closed-form spatial Green's function for finite dielectric structures is... 

    Atomistic study of the lattice thermal conductivity of rough graphene nanoribbons

    , Article IEEE Transactions on Electron Devices ; Volume 60, Issue 7 , 2013 , Pages 2142-2147 ; 00189383 (ISSN) Karamitaheri, H ; Pourfath, M ; Faez, R ; Kosina, H ; Sharif University of Technology
    2013
    Abstract
    Following our recent study on the electronic properties of rough nanoribbons , in this paper the role of geometrical and roughness parameters on the thermal properties of armchair graphene nanoribbons is studied. Employing a fourth nearest-neighbor force constant model in conjuction with the nonequilibrium Green's function method the effect of line-edge-roughness on the lattice thermal conductivity of rough nanoribbons is investigated. The results show that a reduction of about three orders of magnitude of the thermal conductivity can occur for ribbons narrower than 10 nm. The results indicate that the diffusive thermal conductivity and the effective mean free path are directly proportional... 

    Green's functions of a surface-stiffened transversely isotropic half-space

    , Article International Journal of Solids and Structures ; Volume 49, Issue 23-24 , 2012 , Pages 3282-3290 ; 00207683 (ISSN) Eskandari, M ; Ahmadi, S. F ; Sharif University of Technology
    2012
    Abstract
    Green's functions of a transversely isotropic half-space overlaid by a thin coating layer are analytically obtained. The surface coating is modeled by a Kirchhoff thin plate perfectly bonded to the half-space. With the aid of superposition technique and employing appropriate displacement potential functions, the Green's functions are expressed in two parts; (i) a closed-form part corresponding to the transversely isotropic half-space with surface kinematic constraints, and (ii) a numerically evaluated part reflecting the interaction between the half-space and the plate in the form of semi-infinite integrals. Some limiting cases of the problem such as surface-stiffened isotropic half-space,... 

    A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

    , Article International Journal of Electronics ; Volume 99, Issue 9 , 2012 , Pages 1299-1307 ; 00207217 (ISSN) Hosseini, R ; Fathipour, M ; Faez, R ; Sharif University of Technology
    Abstract
    In this article, we have used quantum and semiclassical models to analyse the electrical characteristics of gate all around silicon nanowire transistor (GAA SNWT). A quantum mechanical transport approach based on non-equilibrium Green's function (NEGF) method with the use of mode space approach in the frame work of effective mass theory has been employed for this analysis. Semiclassical drift diffusion mode space (DDMS) approach has also been used for the simulation of GAA SNWT. We have studied the short-channel effects on the performance of GAA SNWT and evaluated the variation of the threshold voltage, the subthreshold slope (SS), the leakage current and the drain-induced barrier lowering... 

    Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons

    , Article Journal of Applied Physics ; Volume 111, Issue 5 , 2012 ; 00218979 (ISSN) Karamitaheri, H ; Neophytou, N ; Pourfath, M ; Faez, R ; Kosina, H ; Sharif University of Technology
    2012
    Abstract
    We theoretically investigate the thermoelectric properties of zigzag graphene nanoribbons in the presence of extended line defects, substrate impurities, and edge roughness along the nanoribbon's length. A nearest-neighbor tight-binding model for the electronic structure and a fourth nearest-neighbor force constant model for the phonon bandstructure are used. For transport, we employ quantum mechanical non-equilibrium Green's function simulations. Starting from the pristine zigzag nanoribbon structure that exhibits very poor thermoelectric performance, we demonstrate how after a series of engineering design steps the performance can be largely enhanced. Our results could be useful in the... 

    Improving ION / IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

    , Article Superlattices and Microstructures ; Volume 86 , October , 2015 , Pages 483-492 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2015
    Abstract
    Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbons. By applying a defect, there is more increase on band gap of monolayer armchair graphene nanoribbon field effect transistor. So, by applying more than one defect, we can reach to much more increase in bandgap of graphene nanoribbon field effect transistors (GNRFET). In this paper, double-gated monolayer armchair graphene nanoribbon field effect transistors (GNRFET) with one single vacancy (1SV) defect (so-called 1SVGNRFET)are simulated and...