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Total 94 records

    Local moment formation in Dirac electrons

    , Article Journal of Physics: Conference Series, 14 January 2015 through 15 January 2015 ; Volume 603, Issue 1 , January , 2015 ; 17426588 (ISSN) Mashkoori, M ; Mahyaeh, I ; Jafari, S. A ; Suzumura Y ; Matsuura H ; Fuseya Y ; Ogata M ; Sharif University of Technology
    Institute of Physics Publishing  2015
    Abstract
    Elemental bismuth and its compounds host strong spin-orbit interaction which is at the heart of topologically non-trivial alloys based on bismuth. These class of materials are described in terms of 4x4 matrices at each v point where spin and orbital labels of the underlying electrons are mixed. In this work we investigate the single impurity Anderson model (SIAM) within a mean field approximation to address the nature of local magnetic moment formation in a generic Dirac Hamiltonian. Despite the spin-mixing in the Hamiltonian, within the Hartree approximation it turns out that the impuritys Green function is diagonal in spin label. In the three dimensional Dirac materials defined over a... 

    Stable semi-analytical method for analysis of plasmonic propagation on periodically patterned metal plates

    , Article Proceedings of SPIE - The International Society for Optical Engineering, 26 January 2010 through 28 January 2010 ; January , 2010 ; 0277786X (ISSN) ; 9780819480057 (ISBN) Yasrebi, N ; Khorasani, S ; Karami Taheri, H ; Rashidian, B ; Hosseini, A ; Sharif University of Technology
    2010
    Abstract
    The need for antennas with improved characteristics for communication and radar applications has resulted in an ever-increasing demand for research in the field of high impedance surfaces, which can work as an artificial magnetic conductor. One method in fabrication of these surfaces is formation of a metamaterial by patterning a metallic surface in the shape of space filling curves (e.g. Hilbert or Peanu Curves). In this paper, we present a novel semi-analytical solution to the problem of plasmonic propagation on these surfaces. The method is based on a previously presented Green's function formalism, which has been reported in an earlier paper of ours. We have modified and improved the... 

    Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

    , Article Physica Status Solidi (A) Applications and Materials Science ; Volume 214, Issue 10 , 2017 ; 18626300 (ISSN) Horri, A ; Faez, R ; Darvish, G ; Sharif University of Technology
    Abstract
    In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this method, we extract the most significant figures of merit such as ON/OFF current ratio, subthreshold swing, and intrinsic gate-delay time. The results indicate that using a bilayer graphene instead of a monolayer graphene as the base material for the source and drain regions leads to a larger ON/OFF current ratio due to the presence of an energy bandgap in biased bilayer graphene. Also, the... 

    Spin FET based on graphene nanoribbon in the presence of surface roughness

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3437-3442 ; 00189383 (ISSN) Chaghazardi, Z ; Faez, R ; Babaee Touski, S ; Pourfath, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, the characteristics of an armchair graphene nanoribbon spin FET (SFET) are investigated in the presence and absence of surface roughness, by employing a multiorbital tight-binding method along with the nonequilibrium Green's function approach. It is found that the bandgap monotonically decreases with increasing the vertical electric field, since Stark effect enhances spin-flip rate under a high vertical electric field. Furthermore, spin transport in the presence of a random potential, which is induced by the concurrent effect of the applied vertical electric field and surface roughness, is carefully analyzed. This random potential strongly scatters carriers and reduces spin... 

    Engineered nanopores-based armchair graphene nanoribbon fet with resonant tunneling performance

    , Article IEEE Transactions on Electron Devices ; Volume 66, Issue 12 , 2019 , Pages 5339-5346 ; 00189383 (ISSN) Rahmani, M ; Ahmadi, V ; Faez, R ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2019
    Abstract
    This article presents a novel armchair graphene nanoribbon (AGNR) field-effect transistor with engineered nanopores for resonant tunneling. Two rectangular nanopores are punched to create two potential barriers and one quantum well. Channel and source and drain contacts are AGNR, indicating structure homogeneity. Nonequilibrium Green's function and Poisson's equations are used for structural analysis. The input variables are well width (WW), drain voltage (VD), and barrier width (BW). The effects of repositioning nanopores and AGNR type (i.e., semiconductor and semimetal) are also studied. The impact of the parameters on the density of states, transmission probabilities, peak current (IP)... 

    Near-room-temperature spin caloritronics in a magnetized and defective zigzag MoS2 nanoribbon

    , Article Journal of Computational Electronics ; Volume 19, Issue 1 , 2020 , Pages 137-146 Zakerian, F ; Fathipour, M ; Faez, R ; Darvish, G ; Sharif University of Technology
    Springer  2020
    Abstract
    Using a tight-binding approach and first-principles calculations combined with the nonequilibrium Green’s function method, the thermal spin transport in a zigzag molybdenum disulfide (MoS 2) nanoribbon in the proximity of a ferromagnetic insulator that induces a local exchange magnetic field in the center of the nanoribbon is investigated. It is found that a pure spin current and perfect spin Seebeck effect with zero charge current can be generated by applying a thermal gradient and local exchange magnetic field without a bias voltage near room temperature. Furthermore, it is shown that this nanoscale device can act as a spin Seebeck diode for the control of thermal and spin information in... 

    Nonlocal hcp kernel functions based on ab initio calculations: Pertinent dislocation problems revisited

    , Article Mechanics of Materials ; Volume 160 , 2021 ; 01676636 (ISSN) Shahvaghar Asl, S ; Shodja, H. M ; Sharif University of Technology
    Elsevier B.V  2021
    Abstract
    Eringen's nonlocal theory and an accurate determination of the nonlocal kernel functions for hexagonal close-packed (hcp) crystals are of interest. The kernel functions are closely related to the anisotropy as well as any crystalline symmetries. To this end, five new distinct nonlocal kernel functions which have the characteristics of discrete atomistic Green's functions in the stress space are obtained through consideration of the nonlocal dispersion relations associated with certain directions combined with ab initio Density Functional Perturbation Theory (DFPT) calculations of the pertinent phonon frequencies. This is the first work which provides the nonlocal hcp kernel functions... 

    Nonlocal Kernel Functions for fcc and hcp Crystals with Application to Dislocation Problems

    , Ph.D. Dissertation Sharif University of Technology Shahvaghar Asl, Silda (Author) ; Mohammadi Shodja, Hossein (Supervisor)
    Abstract
    For half a century, the problem of extracting the components of the nonlocal moduli tensor of anisotropic materials has been remained unsolved. In the present work, for the first time, the solution of this problem is proposed and the components of nonlocal moduli tensor are obtained for close-packed crystals, i.e. face center cubic or hexagonal closed packed. To this end, new distinct nonlocal kernel functions which have the characteristics of discrete atomistic Green’s functions in the stress space are obtained through consideration of the nonlocal dispersion relations. Each of dispersion relations are associated with certain directions and are combined with ab initio Density Functional... 

    Green's function approach to the low temperature properties of Cs 2CuCl 4: Anisotropy effects

    , Article European Physical Journal B ; Volume 84, Issue 1 , 2011 , Pages 37-45 ; 14346028 (ISSN) Rezania, H ; Langari, A ; Sharif University of Technology
    Abstract
    We have studied the effect of both axial and transverse anisotropy on the critical field and thermodynamic properties of the field induced three dimensional antiferromagnetic Heisenberg model on the frustrated hexagonal lattice for Cs 2CuCl 4 compound. The spin model is mapped to a bosonic one with the hard core repulsion constraint and the Green's function approach has been implemented to get the low energy spectrum and the corresponding thermodynamic properties. To find the critical field (B c ) we have looked for the Bose-Einstein condensation of quasi-particles (magnons) which takes place when the magnon spectrum vanishes at the ordering spiral wave vector. We have also obtained the... 

    Green element solution of one-dimensional counter-current spontaneous imbibition in water wet porous media

    , Article Journal of Petroleum Science and Engineering ; Volume 70, Issue 3-4 , 2010 , Pages 302-307 ; 09204105 (ISSN) Biniaz Delijani, E ; Pishvaie, M. R ; Sharif University of Technology
    Abstract
    A Green Element numerical formulation is used to solve the time-dependent nonlinear one-dimensional counter-current spontaneous imbibition diffusion equation in which water enters a water wet rock spontaneously while oil escapes by flowing in the opposite direction. The Green Element Method (GEM) is an element by element approach of the boundary element method. In this new method, by generating large sparse global matrices and yet taking advantage of properties of Green's function, solution of more complicated physical problem is achievable while at the same time much less computational effort is needed rather than boundary element method (BEM). By discretizing both the boundary and problem... 

    Response of the beams on random Pasternak foundations subjected to harmonic moving loads

    , Article Journal of Mechanical Science and Technology ; Volume 23, Issue 11 , 2010 , Pages 3013-3023 ; 1738494X (ISSN) Younesian, D ; Kargarnovin, M. H ; Sharif University of Technology
    2010
    Abstract
    Dynamic response of infinite beams supported by random viscoelastic Pasternak foundation subjected to harmonic moving loads is studied. Vertical stiffness in the support is assumed to follow a stochastic homogeneous field consisting of a small random variation around a deterministic mean value. By employing the first order perturbation theory and calculating appropriate Green's functions, the variance of the deflection and bending moment are obtained analytically in integral forms. To simulate the induced uncertainty, two practical cases of cosine and exponential covariance are utilized. A frequency analysis is performed and influences of the correlation length of the stiffness variation on... 

    Analyzing transient heat and moisture transport surrounding a heat source in unsaturated porous media using the Green's function

    , Article Geothermics ; Volume 81 , 2019 , Pages 224-234 ; 03756505 (ISSN) Yazdani Cherati, D ; Ghasemi Fare, O ; Sharif University of Technology
    Elsevier Ltd  2019
    Abstract
    Generally, in most areas, groundwater level is deep and heat sources (e.g., energy piles)are embedded in unsaturated soil media. Therefore, in order to accurately analyze the soil response close to heat sources, both heat and moisture transport in unsaturated soil domain should be considered. Thermal loading changes the moisture content in the porous media. In this study, the energy conservation and mass fluid continuity equations derived from hydrothermal analysis of a partially saturated soil medium are considered in cylindrical coordinate system. To make the analytical solution possible, partial differential equations (PDEs)are turned into ordinary differential equations (ODEs), through... 

    Analytical study of dissipative solitary waves

    , Article Physica Scripta ; Volume 77, Issue 2 , 2008 ; 00318949 (ISSN) Dini, F ; Emamzadeh, M. M ; Khorasani, S ; Bobin, J. L ; Amrollahi, R ; Sodagar, M ; Khoshnegar, M ; Sharif University of Technology
    2008
    Abstract
    In this paper, the analytical solution to a new class of nonlinear solitons is presented with cubic nonlinearity, subject to a dissipation term arising as a result of a first-order derivative with respect to time, in the weakly nonlinear regime. Exact solutions are found using the combination of the perturbation and Green's function methods up to the third order. We present an example and discuss the asymptotic behavior of the Green's function. The dissipative solitary equation is also studied in the phase space in the non-dissipative and dissipative forms. Bounded and unbounded solutions of this equation are characterized, yielding an energy conversation law for non-dissipative waves.... 

    Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

    , Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 240-242 ; 9781424417285 (ISBN) Orouji, A.A ; Dehdashti, N ; Faez, R ; Sharif University of Technology
    2007
    Abstract
    For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of...