Sharif Digital Repository

In the present paper, for the first time, an impact of the hole etching depth within a photonic crystal vertical cavity surface emitting diode laser (PhC VCSEL) on its heat sources is analyzed discussed. The device employs InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs) modeled using a numerical simulator. The basic design goal was the study of the various elements of heat sources upon the hole etching depth, including the total heat power, the Joule heat power, the Peltier-Thomson heat power and the Recombination heat power  

In the present work, a new structure of the strained quantum-well (QW) laser diode is designed and simulated. In this structure, the active region consists of tow 6H-SiC barrier and 3C-SiC quantum well (QW)which is sandwiched between two layers of 6H-SiC that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroel ectricity of 6H using an industrial-based numerical simulator. The basic design goal was to decrease the threshold current by using only silicon carbide polymers. We could obtain a working model at stable optical wavelength of 0.83μm. This paper provides key results of the device characteristics, including the light power... 

In the present work, a new vertical cavity surface emitting laser (VCSEL) structure employing combined oxide layer and single defect photonic crystal index guiding layer has been investigated for L-band optical fiber application. The basic design goal was to obtain photonic crystal VCSEL (PhC VCSEL) with the high power, high slop efficiency and low threshold that operate at 1.55-1.6μm wavelength single mode region. By using the combination of photonic crystal and oxide layer, we have achieved high power VCSEL that operated fundamental mode. The influence of the hole etching depth of photonic crystal looking for the highest power and the lowest threshold current is also investigated  

In the present paper, we investigated the various elements of heat sources within a silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser. The device employs 3C-SiC quantum well (QW) which is sandwiched between two layers of 6H-SiC as cladding regions that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 6H using a numerical simulator. The basic design goal was the study of the various elements of heat sources, including the Joule heat power, the Peltier-Thomson heat power and the recombination heat power  

We present an edge emitting laser structure employing silicon carbide polymers only. In this structure, 3C-SiC well embedded in 6H-SiC barriers are used as the active region, which is sandwiched between the 6H-SiC mirror at the top and bottom of structure. The basic design goal is to use only silicon carbide polymers and decrease the threshold current and stable optical wavelength of the lasers with silicon carbide polymers. This paper provides key results of the device characteristics, including the light power versus electrical current and the optical wavelength versus current  

In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5mW to 6.4mW at bias current of 9mA was achieved. In this paper, device characteristics such as light power versus... 

The comprehensive optical-electrical-gain-thermal self-consistent model of the 1.55 μm AlGaInAs Photonic Crystal vertical cavity surface emitting diode lasers (PhC VCSELs) with buried tunnel junction (BTJ) has been applied to optimize its threshold characteristics. It shows that, for 5 μm devices, the room temperature (RT) threshold current equal to only 0.59 mA and maximum operating temperature equal to as much as 380 K. Results suggest that, the 5 μm AlGaInAs PhC VCSELs seem to be the most optimal ones for light sources in high performance optical communication systems  

In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser's device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, the wall-plug efficiency is sensitive to changes in temperature. The lasers used in this work were separate-confinement quantum-well lasers with a single strained GaInP, located in a latticematched waveguide core and cladding region of 6H-SiC. This paper provides the key results of the wall-plug efficiency upon the lattice temperature  

In this paper, a silicon-on-insulator (SOI) p-n-p-n tunneling field-effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band-to-band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3) and strontium bismuth tantalate (SrBi2Ta2O9) provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling... 

In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the tri-gate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson’s equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with... 

In this paper we examine how exchange flow in Urmia Lake plays a crucial role in dynamics of the lake. Urmia Lake, a very large hyper-saline lake of high ecological significance, is located in northwest of Iran with a 15-km causeway dividing it into north and south lakes. A 1250-m opening in the causeway near the east coast links the two lakes. The differences in mean water levels and densities of the two lakes increase in spring due to large freshwater inflows into the south lake. High evaporation dominates the lake in summer. By incorporating the results of a two-layer hydraulics theory into a mixing model of the lake, we show that the exchange flow through the opening diminishes the water... 

Learning a foreign language encompasses a process of trial and error that can lead to the progression of the learner's interlanguage, meaning that the learners make use of their language knowledge that receives feedback and brings about progress through diagnosis of the problems and being corrected by the teacher. Therefore, there exists a need to analyze the underlying reasons causing the students to remain taciturn with a low willingness to communicate (WTC) during a language class. There has been much work done investigating the role of the learner's stable personal characteristics (traits) along with their situational changes at a specific time (states) that influence the student's... 

Using 3-D scanned data to analyze and extract pore network plays a vital role in investigation of porous media's characteristics. In this paper, a new simple method is developed to detect pores and throats for analyzing the connectivity and permeability of the network. This automated method utilizes some of the common and well-known image processing functions which are widely accessible by researchers and this has led to an easy algorithm implementation. In this method, after polishing and quality control of images, using city-block distance function and watershed segmentation algorithm, pores and throats are detected and 3-D network is produced. This method can also be applied on 2-D images... 

In this paper, we try to recognize and distinguish different groups of arrhythmia using novel features which have been obtained from the heart rate's phase space in recent years. For this purpose, we used Triangular Phase Space Mapping (TPSM) and Parabolic Phase Space Mapping (PPSM). For recognition, we used three groups of 15 subjects using the Physionet database (Arrhythmia, Congestive Heart Failure (CHF), and Atrial Fibrillation (AF)) with Normal Sinus Rhythm (NSR). The obtained features discriminate arrhythmia from NSR by p