Sharif Digital Repository

In the recent years, field effect transistor has been made by using graphane. But there has not been any study about bipolar transistor. Bipolar transistor can’t be constructed using graphene due to the fact that its band gap is zero. So in this thesis, in an attempt to remove this difficulty, the bipolar transistor made using graphane has been investigated and their property has been compared to those of three dimensional silicon transistors.
At the beginning of the thesis, we will have a review of graphane diode and will consider the procedure for evaluating its current which would be the report of what has been done sofar. After that we made graphane transistor using graphane diode... 

In this thesis, we present for the first time a unified and extensive theory of two-dimensional bipolar junction transistors fabricated on mono-layer materials. Unlike their bulk counterparts which are described by the conventional theory of bulk junctions, the proposed class of structures behaves here significantly different and needs an entirely different theory. This has been based on the theory of planar p-n rectifying junction diodes developed in an earlier study of ours, where we had investigated a basic p-n junction model with abrupt doping profile. The accuracy of theory is limited to the applicability of drift-diffusion model with depletion-layer approximation, while disregarding...