Sharif Digital Repository

In this thesis, we present for the first time a unified and extensive theory of two-dimensional bipolar junction transistors fabricated on mono-layer materials. Unlike their bulk counterparts which are described by the conventional theory of bulk junctions, the proposed class of structures behaves here significantly different and needs an entirely different theory. This has been based on the theory of planar p-n rectifying junction diodes developed in an earlier study of ours, where we had investigated a basic p-n junction model with abrupt doping profile. The accuracy of theory is limited to the applicability of drift-diffusion model with depletion-layer approximation, while disregarding...