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semiconductors
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Investigation of Nano-Semiconductors for Decontamination of Pollutants under Solar Light
, M.Sc. Thesis Sharif University of Technology ; Soltanieh, Mohammad (Supervisor) ; Vossoughi, Manouchehr (Supervisor) ; Feilizadeh, Mehrzad (Co-Advisor)
Abstract
Photocatalytic degradation is one of the developing modern and effective methods for decontamination of hazardous pollutants of chemical industrial wastewater. For this purpose, in this research, the efficiency of the photocatalytic process in degradation of Cortisone Acetate is investigated under solar light irradiation, and the effect of two useful oxidants, potassium persulfate (PDS) and potassium proxy mono sulfate (PMS), on the degradation efficiency is examined. At first, the single effect of these two oxidants, and then their interaction effects with the photocatalyst (TiO2-P25) and solution pH by analytical analysis and with the help of Response Surface Methodology (RSM) and...
Synthesize and Characterization of 2D WS2 Nano-layers for Next Generation Optoelectronic Devices
, M.Sc. Thesis Sharif University of Technology ; Simchi, Abdolreza (Supervisor)
Abstract
Transition Metal Dichalcogenids (TMD) are types of 2D materials that exibit wide range of electronic, optical, mechanical, chemical, and thermal properties. These materials with MX2 general formula, have atract attentions with respect to their unusual properties because of their very limited dimensions. Their tunable properties and materials availibility make them attractive for wide range of applications. In recent years, chemical vapor deposition (CVD) methods are promising in preparing high quality TMD with scalable size, controllable thickness, and very excellent electronic properties. Also, chalenges are remaining in synthesis and transfering of TMD are difficulty for most of...
Silicon Vacancy in 4H-SiC: Many-body Electronic Structure
, M.Sc. Thesis Sharif University of Technology ; Vesaghi, Mohammad Ali (Supervisor)
Abstract
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing. 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations suggest that silicon vacancy point defects in SiC possess properties similar to those of the NV center in diamond. We provide a new theoretical frame to explain a wider range of experimental results. Employing a proposed generalized Hubbard model, with the help of electronic structure programs, DFT, second quantization, and various computational approaches, we obtain new...