Design of a Low Noise Amplifier without On-Chip Inductor

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Behmanesh, Baktash | 2008

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 39367 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Atarodi, Mojtaba
Abstract:
In this project a wide-band inductorless Low Noise Amplifier (LNA) has been designed using 0.18 micrometer CMOS technology. The specification of this amplifier has been explored in frequency band of 330MHz to 10GHz. Wide-band input and output impedance matching, low Noise-Figure (NF), reasonable voltage gain and low power consumption are the main challenges of Low Noise Amplifier design. Without using an inductor a better overall performance of LNA in a wide frequency band as well as a lower chip area has been achieved. In this design a novel noise cancellation technique in common-gate topology has been used for lowering the Noise Figure of the LNA. Group Delay of the designed LNA, which is an important factor in wide-band circuits with pulsed input signals, is among the best results to date. Layout of the circuit has been done using 0.18 micrometer CMOS technology. Appendices of the thesis include a brief review of common definitions in Low Noise Amplifier design, a review of various design methods of Low Noise Amplifiers and a review of recent works in the field of LNA design
Keywords:
Noise Removing ; Low Noise Amplifier (LNA) ; Q-Enhancement Technique ; Ultra Wideband ; Radio Frequency Power Amplifier

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