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Monte Carlo Simulation of Deposition of the Carbon Thin Films by Asymmetric Molecules

Amiri, Mehdi | 2009

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 39634 (04)
  4. University: Sharif University of Technology
  5. Department: Physics
  6. Advisor(s): Vesaghi, Mohammad Ali
  7. Abstract:
  8. The applications of science and technology of materials grows rapidly nowadays One of the major aspect of this science discuss about the growth of thin films via deposition of molecules and atoms. By this way we can diagnose physical and chemical properties of thin films whose applications in electronics, computer, microelectronic industry, material engineering telecommunications and so advances every day. In this way we smell out the process of the growth of diamond like carbon (DLC) thin films whose importance is extended nowadays. By acknowledgement of variables that influence the dynamics of film formation we make a big jump in attaining the optical, physical and electrical properties of thin films. Here we start with a little summary of the properties of carbon thin films and dynamics of the growth. Afterward we take a brief look at different ways of simulating thin film growth then in next chapter we will introduce a new model for growth based on asymmetric rectangular carbon atoms .we run this model by Monte Carlo simulation method We look at the behaviour of growth by changing the controllable variables like substrate roughness, diffusion energy, kind of molecules in simulation and we analyze their influence in density of voids, film roughness and density. At the end we will compute the growth exponents for different conditions of growth.
  9. Keywords:
  10. Thin Films ; Simulation ; Growth ; Monte Carlo Method ; Asymmetry ; Quasi Diamonds Films

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