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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 39655 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Farzaneh, Forouhar
- Abstract:
- Transferred Electron Device is a semiconductor device being capable of generating oscillation in microwave frequencies. Applying a bias voltage to the device and putting it in a resonant circuit, a periodic waveform in the output current is observed. The cause of the generation of oscillation in the device is related to the characteristics of velocity-field in the device. In some part of the characteristics, it is observed that increasing the field inside the device causes the velocity of electrons to be reduced. This causes the generation of the negative conductance and the oscillation of the output current under some conditions. The purpose of this thesis is to represent an equivalent circuit including nonlinear capacitances and conductances which are functions of voltage, versus the physical parameters of the device such as the length of the device and the doping profile using the distribution form of the field and charge along the device, such that it could be usable in microware applications. In this thesis, after a general review of the device physics, we investigate the relations governing the device in the stable state. Then, we consider the simulation of the device in the stable state and from it; we obtain a circuit model for the device. We compare the results with the references through these stages
- Keywords:
- Velocity ; Equivalent Circuits ; Mobility ; Electrical Field ; Gunn
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