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Investigation of Temperature Effect on MOSFET Parameters and Modeling of Carrier Mobility in Temperature Range of 77 - 300K

Seyed Fakhari, Moein | 2010

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 41197 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Fardmanesh, Mahdi; Medi, Ali
  7. Abstract:
  8. Temperature reduction from room temperature to liquid nitrogen temperature has a significant effect in improvement of semiconductor devices operation such as field effect transistors. Nowadays cryoelectronics as a considerable branch of electronics is concerned by several groups. In order to optimize the procedure of low temperature IC design and fabrication we investigated the temperature effects on different parameters of MOSFET in this thesis. Several transistors in a variety of channel lengths were fabricated in different technology files. Wide measurement experiments were done on these transistors in order to find their drain current vs. drain to source voltage characteristics. From these results the most important parameters in determining MOSFET operation in saturation region including threshold voltage and carrier mobility is extracted. Different scattering mechanisms in MOSFET channel is calculated in several temperatures for different channel lengths. Using the results of these measurements a comprehensive model for carrier mobility in MOSFET inversion layer as a function of temperature, effective field, and channel length is proposed. Furthermore some applications of the proposed model including maximum mobility curves and zero temperature coefficient (ZTC) as a temperature independent bias point are introduced and investigated
  9. Keywords:
  10. Metal Semiconductor Field Effect Transistor (MESFET)Technology ; Field Effect Transistors ; Scattering ; Mobility ; Threshold Voltage ; Cryoelectronics

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