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A Simulation Study of Graphene Nanoribbon Field Effect Transistor

Samadi, Mohsen | 2012

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 44070 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Faez, Rahim
  7. Abstract:
  8. In this thesis, a field effect transistor (FET) using armchair graphene nanoribbon as the channel is simulated, and the effects of changing nanoribbon width and length, as well as adding defects, are also studied. To obtain the Hamiltonian matrix and the energy band structure of graphene nanoribbon, tight binding method is used in which the first and third neighbor approximation is considered. Also, to maximize accuracy, we also considered the edge bond reconstruction. To obtain the transport characteristics of the transistor, such as the transmission coefficient and the density of states (DOS), Poisson and Schrodinger equations are solved self-consistently. We used the nonequilibrium Green’s function method to solve the Schrodinger equation. Finally, I-V characteristics of the transistor can be obtained using the Landauer formula. In this thesis, the effect of Stone-Wales defects on transport characteristics of the transistor is also investigated. Changes in the I-V characteristics of the GNRFET are studied by comparing its sub-threshold swing, off-current and on-current density, before and after introducing defects. Our results show that adding defects reduces the on-current and off-current simultaneously. In some cases, the sub-threshold swing will increase, so the transistor will show a better performance
  9. Keywords:
  10. Non Equilibrium Green ; Field Effect Transistors ; Tight Binding Method ; Armchair Graphene Nanoribbon ; Stone-Wales Defect

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