Design of Power Amplifier in Ku Band in the Process of GaAs-pHEMT

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Yousefi, Alireza | 2013

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 44307 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Medi, Ali
Abstract:
Power amplifiers are used as the last block of transmitters. This block can be categorized as the one of most important part in communication systems. However, in transmitter systems which require high power to create stable link with the receivers, fabrication process like CMOS are unable to provide such level of power. Thus, designers employ another group of integrated circuits which names MMIC that offers this capability to designers. MMIC is the abbreviation of Microwave Integrated Circuit which is implemented in compound substrates like GaAs. Monolithic microwave integrated circuits enable the implementation of amplifiers in small size, large number, with high precision and appropriate cost. In addition, these circuits with watt-level power density per millimeter of gate width provide high level of power in few millimeters square of area that previously was solely realizable in hybrid circuits. In this thesis, design procedure of an amplifier in Ku/K frequency bands is studied. The power amplifier is fabricated in 0.25um GaAs pHEMT. The large signal and small signal measurements of the amplifier show good consistency with simulations
Keywords:
Power Amplifier ; Wideband Amplifier ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT)

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