Simulation and Analysis of Bilayer Graphene FET with Defect

Please enable javascript in your browser.

Ghalehkohneh, Ali | 2013

687 Viewed

Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 45560 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Faez, Rahim
Abstract:
In this thesis, a field-effect transistor using armchair bilayer grapheme nanoribbon as channel material in simulated. In first, electronic property of bilayer graphene and bilayer graphene nanoribbons using tight binding are studied. Transport properties of transistor, sush as transsmition and density of carriers, are studied by self-consistently solving poisson equation and Non-Equilibrium Green’s Function. Finally, I-V characteristics of the transistor can be obtained using the Landauer formula.
Also, effect of Stone-Wales defect on bandstructure and transmission of armchair bilayer grapheme nanoribbon is investigated. This defect increases energy gap and broadens egergy bands in bandstructure. The effect of this defect on I-V characteristics of the transistor, transconductance, subthreashold and I_on⁄I_off ratio is also investigated. This defect reduces transconductance and increases subthrashold swing. Also, this defect reduses off-current of transistor and also reduses on-current. In such cases I_on⁄I_off ratio can be increased.
Keywords:
Bilayer Graphene ; Tight Binding Method ; Non Equilibrium Green ; Stone-Wales Defect

No TOC