Design and Implementation of a Ka-band Power Amplifier in GaAs pHEMT

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Hosseinzadeh, Navid | 2013

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 45794 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Medi, Ali
Abstract:
Power amplifiers are used as the last block of transmitters. This block can be categorized as the one of most important part in communication systems. However, in transmitter systems which require high power to create stable link with the receivers, fabrication process like CMOS are unable to provide such level of power. Thus, designers employ another group of integrated circuits which names MMIC that offers this capability to designers. In this thesis, design procedure of an amplifier in Ka frequency bands is studied. The power amplifier is fabricated in 0.1um GaAs pHEMT.The isolating backvia wall (IBVW) technique hasbeen proposed to improve gain and stability. Some other designtechniques were used that resulted in bandwidth extension, andchip area reduction of the designed power amplifiers. FabricatedPA delivers 5 W saturated output power with 25% averagepower added efficiency (PAE) and 20 dB small-signal gain inthe frequency band of 31-41 GHz
Keywords:
Power Amplifier ; Monolitic Microwave Integrated Circuit (MMIC) ; KA Band ; Gallium Arsenaide ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT)

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