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Compare noise characteristic of DC-HEMT and HEMT

Sadeghi, S ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. DOI: 10.1109/IranianCEE.2013.6599546
  3. Publisher: 2013
  4. Abstract:
  5. We compare noise characteristics of Al0.3Ga0.7N /GaN/ Al0.06Ga0.94N/GaN DC-HEMT and Al0.3Ga 0.7N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant
  6. Keywords:
  7. Drain voltage ; Gate voltages ; High currents ; High gain ; Low noise ; Noise characteristic ; Saturation region ; Triode region ; Aluminum ; Electrical engineering ; Threshold voltage ; High electron mobility transistors
  8. Source: 2013 21st Iranian Conference on Electrical Engineering ; May , 2013 , Page(s): 1 - 4 ; 9781467356343 (ISBN)
  9. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6599546