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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 47462 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Medi, Ali
- Abstract:
- Today using of microwave integrated circuits in commercial and military applications is paid attention too much, especially with emerging of monolithic microwave integrated circuits that prepares for us producing of amplifier with mass production, enough accuracy and proper cost. Power amplifiers that used in the end of transmitter path are paid attention in this field. However,in transmitter systems which require high power to create stable link with the receivers, fabrication process like CMOS are unable to provide such level of power. Thus, designers employ another group of integrated circuits which names MMIC that offers this capability to designers.MMIC is the abbreviation of Microwave Integrated Circuit which is implemented in compound substrates like GaAs and GaN. Monolithic microwave integrated circuits enable the implementation of amplifiers in small size, large number, with high precision and appropriate cost. In addition, these circuits with watt-level power density per millimeter of gate width provide high level of power in few millimeters square of area that previously was solely realizable in hybrid circuits. In this thesis, design procedure of an amplifier in X/Ku frequency bands is studied. The power amplifier is fabricated in 0.25um GaAs pHEMT.We can reach to 20 % efficiency in all three amplifiers. In addition to, we can obtain to 10 dB return loss in input and output of these designs. This work is very comparable with other products of renowned companies such as Triquint
- Keywords:
- Power Amplifier ; Wideband Amplifier ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT) ; Gallium Arsenaide Technology ; Amplifier Design
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