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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 47461 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Medi, Ali
- Abstract:
- Nowadays, application of microwave integrated circuits in commerce and humanitarian military measures plays an important role. When integrated microwave circuits emerged, the dream of producing high quality and low cost amplifiers and mass productionhas been fulfilled. Power amplifiers which are the last block in a communication systemare one of the most important circuits in this field.
Since driver amplifiers are interstage between high and low power sections of a system, should have good specificationsfor both small and large signal analysis. Thus, designing such a circuit can be very challenging. In order to get the desired bandwidth, high-order filters are used as interstage matching networks. Furthermore, three common stabilitiy circuits are meticulously analyzed, and the best ones are employed not only for satisfying the stability condition, but also for fulfilling low quality factor. In this project we tried to design driver amplifiers with high gain and good stability which is able to deliver a sufficient power to the next stage power amplifier.These circuitsare designed in X/Ku band in pHEMT GaAs 0.25um process. Finally, two amplifiers with output power of 1.2W are designed and implemented with different stability circuits. In comparison with analogous amplifiers, designed ones have better input return loss thanks to reasonable selection of stability circuits. After designing and conducting reliability experiments on the designed chips, they will be fabricated - Keywords:
- Power Amplifier ; Wideband Amplifier ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT) ; Gallium Arsenaide Technology ; Preamplifier
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