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Simulation and Comparative Study of Tunneling FETs Based on Graphene Nanoribbon and Phosphorene Monolayer

Almasi, Hossein | 2015

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 47447 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Faez, Rahim
  7. Abstract:
  8. In this thesis, we simulate and investigate two transistors which both have tunneling FET (TFET) structure but the channel in the first one is graphene nanoribbon (GNR) and in the second one is a monolayer of phosphorene (PML). To describe the quantum systems of the transistors, we use the tight binding method and its models for the channel materials. In case of the PML TFET, based on the behavior of the phosphorene nanoribbon in different widths, we obtain a proper amount for the width to model the infinite-width channel. To extract the channel quantum transport, the Schrodinger-Poisson equations are self-consistently solved. In the next step, we simulate the GNR TFET and present the results for the zero bias and several other biases. For each bias, the consistence of the band diagram, charge density versus energy, transmission probability and Fermi level difference is checked and then the free carriers and total charge density is matched to prove the rational relation between them. Finally, we compare our results with that of a previous work and look for the roots of the little present difference. In the next step, we study the effect of the drain voltage on the variation of the drain current versus the gate voltage and then calculate the amount of the quantities such as, the ON current, OFF current and their ratio, threshold voltage and average and minimum subthreshold slop (SS).
    All the above steps are repeated for the PML TFET and from the comparison of the results for both transistors, we conclude that the PML TFET pays the cost of a little reduction in the ON current and gains the high-valued achievements of a much more improved OFF current and subthreshold slope, all along with the advantage of less complicated fabrication
  9. Keywords:
  10. Graphine ; Simulation ; Non Equilibrium Green ; Graphene Nanoribbons ; Tunneling Field Effect Transistor (TFET) ; Phosphorene

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