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The Fabrication and Characterization of Graphene by Mechanical Exfoliation Method and a Review on Graphene Field Effect Transistors

Rostami Osanloo, Mehrdad | 2015

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 47693 (04)
  4. University: Sharif University of Technology
  5. Department: Physics
  6. Advisor(s): Akhavan, Omid
  7. Abstract:
  8. Graphene is a semiconductor with zero band gap. Due to electron ballistic transportation and having a single atom thickness of graphene, it is counted as an ideal material in Nano-electronic industry and essential candidate for fabrication of next generation of transistors. The Fermi level in graphene is located between Conduction and valance bands in a Dirac point. Due to low resistance, graphene has a substantial sensitivity near the Dirac point to local carrier density changes. This feature makes delicate detection of electromagnetic waves and gas sensing by graphene field effect transistors (GFETs). In this thesis, fabrication and characterization of graphene field effect transistor on an appropriate substrate Si/SiO2 be done. Also, the quality and number of graphene sheets by optical microscopy, AFM analyses and Raman spectroscopy investigated. The fabrication of GFET starts by mechanical exfoliation procedure and deposition of graphene on the silicon dioxide substrate in order to obtain single layer graphene. Then, the characterization process will be done by using of Raman spectroscopy and Atomic Force Microscopy to evaluate the quality of structure and the thickness of graphene. Moreover, we had a glance review on graphene field effect transistor’s fabrication steps and its’ real performance as well as we studied the most important issue about lithography methods during device fabrication
  9. Keywords:
  10. Graphine ; Graphene Field Effect Transistors ; Graphene Production

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