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Conductor-insulator transition and electronic structure of Ca-doped BiFeO 3 films

Ahadi, K ; Sharif University of Technology | 2012

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  1. Type of Document: Article
  2. DOI: 10.1016/j.matlet.2012.05.126
  3. Publisher: Elsevier , 2012
  4. Abstract:
  5. The electronic conductor-insulator transition in Ca-doped BiFeO 3 films grown by pulsed-laser deposition technique has been investigated. Nature of the transition is resolved to be Mott type through the control of band-filling. Calcium resolved to have colossal effect on enhancing the electrical conductivity of BiFeO 3, but it did not affect band gap of the mother phase perceptibly. UV-visible study yielded band gap of 2.72-2.81 eV (at 300 K) for different concentrations of calcium. Both UV-visible and photoluminescence spectra revealed sub-band gap transitions at 2.17 and 2.38 eV, of which the latter might be ascribed to the oxygen vacancies
  6. Keywords:
  7. Band fillings ; Ca-doped ; Conductor-insulator transition ; Electrical conductivity ; Electronic materials ; Gap transition ; Photoluminescence spectrum ; Pulsed-laser deposition technique ; Subbands ; UV-visible ; Electric conductivity ; Electronic structure ; Energy gap ; Ferroelectricity ; Magnetic materials ; Magnetic thin films ; Photoluminescence ; Pulsed laser deposition ; Thin films ; Calcium
  8. Source: Materials Letters ; Volume 83 , 2012 , Pages 124-126 ; 0167577X (ISSN)
  9. URL: http://www.sciencedirect.com/science/article/pii/S0167577X12008063