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Bode stability analysis for single wall carbon nanotube interconnects used in 3D-VLSI circuits

Nasiri, S. H ; Sharif University of Technology | 2011

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  1. Type of Document: Article
  2. Publisher: 2011
  3. Abstract:
  4. Bode stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for the first time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry of each tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable
  5. Keywords:
  6. Interconnects ; Bode stability criterion ; Interlayer via ; Single wall carbon nanotubes ; Time domain ; Carbon nanotube interconnects ; Relative stabilities ; Single Wall ; Stability analysis ; Transmission line methods ; Transmission line modeling ; Electric lines ; Electric network analysis ; Stability criteria ; Three dimensional ; Transmission line theory ; VLSI circuits ; Carbon nanotubes ; Optical interconnects ; Three dimensional computer graphics ; Tubes (components) ; Single-walled carbon nanotubes (SWCN) ; Time domain analysis
  7. Source: World Academy of Science, Engineering and Technology ; Volume 77 , 2011 , Pages 568-571 ; 2010376X (ISSN)
  8. URL: http://waset.org/publications/8373/bode-stability-analysis-for-single-wall-carbon-nanotube-interconnects-used-in-3d-vlsi-circuits