Analysis of PlasMOStor in CMOS Compatible Plasmonic Circuits

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Salehian, Borna | 2015

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 48409 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Mehrany, Khashayar
Abstract:
Thus far numerous components and devices have been designed and realized based on plasmonics. Hereon, we focus on PlasMOStor which is probably the first and most important CMOS compatible plasmonic modulator. It resembles to its electronic counterpart MOS transistor in geometry, unless, it has a plasmonic waveguide instead of the regular channel to modulate optical signals . By applying voltage to the gate and inset of charge carrier accumulation, optical properties of the channel changes and plasMOStor turns off. In this thesis, we carry out a through investigation of plasMOStor’s operation. We show that the proposed theoretical description of plasMOStor is fallacious. Subsequently, inspired by plasMOStor, we investigate the MOSOM structure and show that it has outstanding virtues. Based on MOSOM, we offer modulators of two differnt types namely peiodic structure and MZI. Our Approach in this study is analytical solution of 2D structures as well as numerical solutions with COMSOL and SILVACO package software
Keywords:
PLasmonic Structure ; Modal Analysis ; Complementary Metal Oxide Semiconductor Technology (CMOS) ; Charge Carrier Accumulation