Loading...

Simulation and optimization of HEMTs

Ilatikhameneh, H ; Sharif University of Technology

719 Viewed
  1. Type of Document: Article
  2. DOI: 10.1109/ACTEA.2016.7560101
  3. Publisher: Institute of Electrical and Electronics Engineers Inc
  4. Abstract:
  5. We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schrödinger equations is obtained with the finite element method. We solve the exact set of nonlinear differential equations to obtain electron wave function, electric potential distribution, electron density, Fermi surface energy and current density distribution in the whole body of the device. For more precision, local dependence of carrier mobility on the electric field distribution is considered. We furthermore compare the simulation to a recent experimental measurement and observe perfect agreement. We also propose a novel graded channel design, for the first time, to improve the transconductance and the threshold frequency of the device
  6. Keywords:
  7. Optimization ; Simulation ; Computational methods ; Differential equations ; Electric fields ; Electric potential ; Electron mobility ; Electrons ; Field effect transistors ; Finite element method ; Nonlinear equations ; Semiconducting aluminum compounds ; Wave functions ; Current density distribution ; Electric field distributions ; Electric potential distribution ; Electron wave functions ; Nonlinear differential equation ; Self-consistent solution ; Simulation and optimization ; High electron mobility transistors
  8. Source: 3rd International Conference on Advances in Computational Tools for Engineering Applications, 13 July 2016 through 15 July 2016 ; 2016 , Pages 1-6 ; 9781467385237 (ISBN)
  9. URL: http://ieeexplore.ieee.org/document/7560101