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Wideband 5 W Ka-Band GaAs Power Amplifier

Hosseinzadeh, N ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/LMWC.2016.2587834
  3. Publisher: Institute of Electrical and Electronics Engineers Inc
  4. Abstract:
  5. This letter presents a Ka-Band 0.1-μm GaAs pHEMT Power Amplifier with broad bandwidth. The isolating backvia wall (IBVW) has been proposed to improve the stability and performance. Over the frequency band of 31-40 GHz, implemented PA delivers 5 W saturated output power, 28% maximum power added efficiency (PAE) and 20 dB maximum small-signal gain. The chip size of the PA is 11.9 mm2. To the best of authors knowledge, the presented PA demonstrates widest bandwidth in Ka-band GaAs PAs while maintaining compact size
  6. Keywords:
  7. GaAs pHEMT ; Ka-Band ; Monolithic microwave integrated circuit Circuit (MMIC) ; Power amplifiers ; Power combining ; Wideband power amplifier ; Amplifiers (electronic) ; Bandwidth ; Broadband amplifiers ; Frequency bands ; Gallium arsenide ; Semiconducting gallium ; Broad bandwidths ; Chip sizes ; Compact size ; Maximum power ; Saturated output power ; Small signal gain ; Wide-band
  8. Source: IEEE Microwave and Wireless Components Letters ; Volume 26, Issue 8 , 2016 , Pages 622-624 ; 15311309 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7519026