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Electron mobility of a two-dimensional electron gas at the interface of SrTiO3 and LaAlO3

Faridi, A ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1103/PhysRevB.93.235306
  3. Publisher: American Physical Society , 2016
  4. Abstract:
  5. We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO3/SrTiO3 following a three band Boltzmann approach at low temperature, where a carrier-charged impurity scattering process is assumed to be dominant. We explain the anisotropic characteristic of the dielectric function, which is a consequence of elliptical bands close to Fermi surface. The screening effect, which weakens the long-range Coulomb interaction of the electron-impurity, is considered within the random phase approximation. Working at carrier densities high enough to neglect the spin-orbit induced splitting of the bands, we find that the mobility varies inversely with the cubic power of the carrier density (n2D-3) in good agreement with the experimental results. We also investigate the role of variable dielectric constant of SrTiO3, the multiband nature of the system, and interband interactions in exploring this result
  6. Keywords:
  8. Source: Physical Review B - Condensed Matter and Materials Physics ; Volume 93, Issue 23 , 2016 ; 10980121 (ISSN)
  9. URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.235306