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A general two-step chemical vapor deposition procedure to synthesis highly crystalline transition metal dichalcogenides: a case study of MoS2
Shidpour, R ; Sharif University of Technology
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- Type of Document: Article
- DOI: 10.1016/j.materresbull.2015.12.039
- Abstract:
- A green and simple synthesis method based on a two-step chemical vapor deposition approach has been developed to synthesize transition metal dichalcogenides flakes. With non-toxic precursor such as transition metal oxides and elemental sulfur, large-area, strong photoluminescent and uniform MoS2 nanoflakes were produced at a relatively low growth temperature (650 °C). Controlling the layer number and morphology was achieved only by precursor concentration without any oxide impurity revealed by SEM, PL and Raman spectroscopy. This method can be used to make wide range of metal chalcogenides such as ZnS, SnS2, PtS2 and PdS2
- Keywords:
- Electron microscopy ; Chalcogenides ; Chemical vapor deposition ; Deposition ; Inorganic compounds ; Metals ; Molybdenum compounds ; Raman spectroscopy ; Transition metal compounds ; Transition metals ; Zinc sulfide ; Crystalline transition ; Electronic materials ; Low growth temperature ; Metal chalcogenide ; PL and Raman spectroscopies ; Precursor concentration ; Transition metal dichalcogenides ; Transition-metal oxides ; Vapor deposition
- Source: Materials Research Bulletin ; Volume 76 , 2016 , Pages 473-478 ; 00255408 (ISSN)
- URL: http://www.sciencedirect.com/science/article/pii/S0025540815302944