Design and Implementation of X-Ku Band Variable Gain Amplifier in CMOS Technology

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Shojaei, Mehdy | 2017

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 49878 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Medi, Ali
Abstract:
In this thesis, a new wide band variable gain distributed amplifier (VGDA) is presented. A novel approach to implement uniform gain control in the wide band frequency range of 8 – 18 GHz is demonstrated. A different technique has been employed to provide necessary DC bias current, avoiding large DC-Feed inductors. A five-section wideband VGDA has been designed and fabricated in 0.18 μm CMOS technology. The VGDA have a flat gain of 11 dB, noise figure better than 5 dB, P1dB of 14 dBm at the output, input and output matching better than -12 dB and -14 dB, respectively, for maximum gain state over the 10 GHz UWB band. The gain control range is between 3 – 11 dB with gain steps of 0.5 dB and rms gain error better than 0.125 dB from 6–20 GHz. The circuit consumes 94 mA of current from a 3.3 V power supply. The overall area of chip including Pads and digital is 1.0 mm  1.9 mm
Keywords:
Current Steering Structure ; Distributed Amplifier ; Complementary Metal Oxide Semiconductor Technology (CMOS) ; Variable Gain Amplifier

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