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Studying the Characteristics of 2D Materials for Electronic Circuits Devices Master Thesis

Torabi, Naghmeh | 2017

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  1. Type of Document: M.Sc. Thesis
  2. Language: English
  3. Document No: 50309 (55)
  4. University: Sharif University of Technology, International Campus, Kish Island
  5. Department: Science and Engineering
  6. Advisor(s): Fardmanesh, Mehdi
  7. Abstract:
  8. The need for further improving the operation of the electronic and optoelectronic devices to raise the speed of the circuits, and to decrease their power dissipation, has led many researchers to investigate the structure of 2D material, such as graphene, transition metal dichalcogenides (TMDs) as MoS2, and other 2D compounds such as BN, due to their prominent electronic properties. TMDs have the highest significant potential for the next generation transistors due to their salient semiconductor characteristics such as electron mobility, band gap, and conductivity. For instance, Graphene is a favorable candidate for analog devices due to zero bandgap. Regarding the importance of bandgap in building transistors, recent researchers are focused on the materials with tunable bandgap which means it can use them as ideal channel materials and gate insulators. Having transistors with high-performance, low-power dissipation, and low cost lead this project to study the characteristics of 2D materials for tunneling based electronic devices in terms of deep understanding of their electronic properties including bandstructure, Density of States (DOS), electron affinity(EA), and mobility, to quest alternative ways to use 2D materials instead of other semiconductor materials. We have calculated electronic properties of semiconductor TMDs group by using DFT. By validating our results with reported results, we have proposed materials for our vertical heterostructure TFET which have significant tunable electronic properties to improve the performance of TFET. Consequently, we can predict that tunneling occurs in TFET Type II considering our intended active channel and Ohmic contacts
  9. Keywords:
  10. Band Structure ; Density Functional Theory (DFT) ; Tunneling Field Effect Transistor (TFET) ; Two Dimentional Materials ; Transmission Metal Dichalcogenides (TMDs)

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