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An instruction-level quality-aware method for exploiting STT-RAM read approximation techniques

Teimoori, M. T ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/LES.2017.2767498
  3. Abstract:
  4. Although the read disturb STT-RAM approximation technique improves performance, it consists of an approximate read plus an approximate write both at the same time. So it may degrade the application Quality of Result (QoR) considerably. On the other hand, the incorrect read decision approximation technique improves power without corrupting the stored data. We adopt an opportunity study for instruction-based distinction of read implementation to take advantage of both of the approximation techniques, while enhancing application’s QoR. We evaluated the proposed method using a set of state of the art benchmarks. The experimental results show that our method allows to increase application’s QoR substantially (i.e., by up to about 24 db) compared to QoR-oblivious use of the read approximation techniques. IEEE
  5. Keywords:
  6. Approximate memories ; Energy consumption ; Approximation algorithms ; Degradation ; Energy utilization ; Heuristic algorithms ; Radiation detectors ; Application quality ; Approximation techniques ; Instruction-level ; Magnetic tunneling ; Memory systems ; Random access memory ; Read disturb ; State of the art ; Random access storage
  7. Source: IEEE Embedded Systems Letters ; 2017 ; 19430663 (ISSN)
  8. URL: https://ieeexplore.ieee.org/document/8086163