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A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

Horri, A ; Sharif University of Technology | 2017

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  1. Type of Document: Article
  2. DOI: 10.1063/1.4984145
  3. Publisher: American Institute of Physics Inc , 2017
  4. Abstract:
  5. In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based on a vertical graphene-WS2 heterostructure and vertical graphene nanoribbon (GNR)-WS2 heterostructure (VTGNRFET). Our model uses the nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting the bandstructure to first principles results. We show that, due to the advantage of switching between tunneling and thermionic transport regimes, an improvement can be achieved in the electrical characteristics of the device. We find that the increase of the number of WS2 layers enhances the on/off conductance ratio but degrades the intrinsic gate-delay time. The results indicate that the on/off conductance ratio of VTGNRFET increases with decreasing the GNR width. © 2017 Author(s)
  6. Keywords:
  7. Field effect transistors ; First principles ; Graphene ; Nanoribbons ; Computational studies ; Electrical characteristic ; Electric field effects ; Graphene nanoribbon (GNR) ; Intrinsic gate delay ; Non-equilibrium Green's function formalism ; Tight binding methods ; Vertical tunneling ; Graphene transistors
  8. Source: Journal of Applied Physics ; Volume 121, Issue 21 , 2017 ; 00218979 (ISSN)
  9. URL: https://aip.scitation.org/doi/abs/10.1063/1.4984145