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Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x = 2 and 3) thin film compounds

Erfanifam, S ; Sharif University of Technology | 2017

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  1. Type of Document: Article
  2. DOI: 10.1016/j.matdes.2017.02.085
  3. Publisher: Elsevier Ltd , 2017
  4. Abstract:
  5. We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers. © 2017 Elsevier Ltd
  6. Keywords:
  7. Low dimensional dichalcogenide compounds ; Optical and electrical bandgaps ; X-ray photoelectron spectroscopy ; Energy gap ; Molybdenum compounds ; Molybdenum oxide ; Scanning tunneling microscopy ; Tin oxides ; Composition control ; Doped tin oxides ; Low dimensional ; Optical and electrical properties ; Scanning tunneling spectroscopy ; Sharp transition ; Spin orbit interactions ; Spin-orbit couplings ; X ray photoelectron spectroscopy
  8. Source: Materials and Design ; Volume 122 , 2017 , Pages 220-225 ; 02641275 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/pii/S0264127517302204?via%3Dihub