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Using of SnS2 Nanostructured Layer as an Electron Transport Layer in the Perovskite Solar Cells

Haghighi, Maryam | 2018

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  1. Type of Document: Ph.D. Dissertation
  2. Language: Farsi
  3. Document No: 51668 (48)
  4. University: Sharif University of Technology
  5. Department: Institute for Nanoscience and Nanotechnology
  6. Advisor(s): Mahdavi, Mohammad; Taghavinia, Nima; Mohammadpour, Raheleh
  7. Abstract:
  8. In this research, we focus on study and investigation of the role of Tin(IV) Sulfide (SnS2) nanostructured layer as electron transport layer in perovskite and chalcogenide thin film solar cells. For this purpose, SnS2 powder was prepared through hydro/solvo-thermal method, utilizing different ratios of water and ethanol as solvent and various sulfur sources (thioacetamide and thiourea). Afterwards, different solvents were investigated to achieve a stable ink (about one month) with uniform dispersion. After determining the appropriate ink and powder, thin films of SnS2 were prepared employing spin coating, spray pirolysis and laser pulsed deposition (PLD) methods and characterized. With each method, SnS2 layers with a thickness of about 50 nm were obtained with desirable optical and electrical properties. In the next step, the performance of the SnS2 layer as the electron transport layer was investigated in the perovskite solar cell and compared to the TiO2 performance. Among different methods, SnS2 thin film layer prepared through spray technique achieved the best performance. The best efficiency for SnS2-based perovskite solar cells reached 12.4%, with a very low hysteresis index of 0.07. In addition to the perovskite solar cell, the role of this material was also studied as a buffer layer in chalcogenide thin film solar cells using SCAPS software modeling. Also, a comparison between the different methods of the SnS2 thin film deposition was performed as a substitute for CdS buffer in various chalcogenide solar cells. In these thin film solar cells, the CIGS(e) and CZTS(e) with SnS2 buffer exhibited a similar performance and somewhat better than CdS buffer. In the CIGS(e) and CZTS(e) solar cells, the SnS2 layer prepared by spin coating method had the best performance, respectively, with an efficiency of 22.47% and 12.61%. The results of the modeling in these solar cells indicate that the non-toxic SnS2 is the suitable choice for substitution of the toxic CdS as the buffer layer in the chalcogenide thin film solar cells
  9. Keywords:
  10. Sulfide ; Electron Transporting Layer ; Perovskite-Based Solar Cell ; Buffer Layer ; Spray Pyrolysis ; Nanostructures Deposition

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