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Low-Frequency model for hand-calculations in circuit design with TMDC-based transistors

Omdeh Ghiasi, H ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1109/TED.2019.2943247
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2019
  4. Abstract:
  5. This article presents an applicable intuitive current-voltage model for long-channel transistors based on 2-D materials. This model carefully predicts the transistor behavior in the saturation and triode regions, which are important for analog and digital applications. Moreover, the effect of mobility degradation on the characteristics of the transistor is probed. As a case study, the developed model has been applied to a transistor with mono-layer MoS2 as the channel material. The excellent agreement with experimental data verifies the accuracy of the model. Finally, the introduced model has been utilized to design an amplifier, a differential pair, and a low-frequency common source mixer with MoS2 © 2019 IEEE
  6. Keywords:
  7. 2-D materials ; Compact modeling ; Field-effect transistor ; MoS2 ; Transition metal dichalcogenides (TMDCs) ; Differential amplifiers ; Field effect transistors ; Layered semiconductors ; Molybdenum compounds ; Timing circuits ; Transition metals ; Compact model ; Current-voltage models ; Differential pairs ; Digital applications ; Long channel transistors ; Mobility degradation ; MoS2 ; Transition metal dichalcogenides ; Mixer circuits
  8. Source: IEEE Transactions on Electron Devices ; Volume 66, Issue 11 , 2019 , Pages 5011-5018 ; 00189383 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/8876881