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Oxygen plasma-induced p-type doping improves performance and stability of PbS quantum dot solar cells

Tavakoli Dastjerdi, H ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1021/acsami.9b08466
  3. Publisher: American Chemical Society , 2019
  4. Abstract:
  5. PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and low-cost method to effectively recover the device performance and stability. Our optimization results show that a 10 min treatment is the best condition, resulting in an enhanced power conversion efficiency from 6.9% for the as-prepared device to 9% for the plasma treated one. Moreover, our modified device shows long-term shelf-life stability. © 2019 American Chemical Society
  6. Keywords:
  7. Plasma ; Stability ; Convergence of numerical methods ; Costs ; Energy gap ; IV-VI semiconductors ; Lead compounds ; Nanocrystals ; Oxygen ; Plasma applications ; Plasma stability ; Plasmas ; Solar cells ; Sols ; Sulfur compounds ; Colloidal quantum dots ; Hole transporting layers ; Lead sulfide ; Oxygen plasma treatments ; Photovoltaic applications ; Photovoltaics ; Power conversion efficiencies ; Quantum dot solar cells ; Semiconductor quantum dots
  8. Source: ACS Applied Materials and Interfaces ; Volume 11, Issue 29 , 2019 , Pages 26047-26052 ; 19448244 (ISSN)
  9. URL: https://pubs.acs.org/doi/10.1021/acsami.9b08466