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A 10-W X-Band Class-F High-Power Amplifier in a 0.25-μm GaAs pHEMT Technology

Alizadeh, A ; Sharif University of Technology | 2020

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2020.3033819
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2020
  4. Abstract:
  5. In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to provide 39-40-dBm output power. The class-F HPA achieves a 10-W output power and a peak power added efficiency (PAE) of 63% for pulsed-mode operation with a pulse repetition frequency (PRF) of 1 kHz and a duty cycle of 10%. The measured peak output power and PAE in the continuous-wave (CW) operation are 9.3 W and 58%, respectively. IEEE
  6. Keywords:
  7. Class-F ; Gallium arsenide ; Gallium nitride ; High-efficiency power amplifiers (PAs) ; High-power amplifiers (HPAs) ; Metals ; Microwave theory and techniques ; PHEMTs ; Power generation ; Capacitance ; Gallium arsenide ; III-V semiconductors ; Semiconducting gallium ; Continuous-wave operations ; Design Methodology ; High power amplifier ; Parasitic capacitance ; Peak output power ; Proof of concept ; Pulse repetition frequencies ; Pulsed-mode operation ; Power amplifiers
  8. Source: IEEE Transactions on Microwave Theory and Techniques ; 2020
  9. URL: https://ieeexplore.ieee.org/document/9250592