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Addressing issues with MLC phase-change memory

Asadinia, M ; Sharif University of Technology | 2020

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  1. Type of Document: Article
  2. DOI: 10.1016/bs.adcom.2019.10.004
  3. Publisher: Academic Press Inc , 2020
  4. Abstract:
  5. All of the presented solutions in this book focused on using MLC phase change memory (PCM) due to density advantage and prolonging PCM lifetime. However, resistance drift can be one of the challenging issues for MLC PCMs. While it is desired to have the density advantage of MLC, the trade-off is resistance drift. Since MLCs have closely separated resistance regions, drift has a chance of overlapping intermediate regions. It may then bring out either single bit or multi-bit soft error. Indeed, drift source is related to the semi amorphous resistance regions that are metastable vs time and temperature while crystalline resistance proves to be stable across time and temperature. This chapter solves this challenge of resistance drift problems by designing a memory architecture and circuit. It improves energy, latency and reliability of MLC PCM while maintaining its capacity advantage. The solution we offer is variable resistance spectrum MLC PCM. © 2020 Elsevier Inc
  6. Keywords:
  7. Energy-efficient memory ; Frequent value locality ; Lifetime ; Multi-level cell PCM ; Phase change memory ; Process variation ; Resistance drift ; Resistance partitioning ; Variable resistance assignment
  8. Source: Advances in Computers ; Volume 118 , 2020 , Pages 111-133
  9. URL: https://www.sciencedirect.com/science/article/pii/S0065245819300579