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Extended-gate field-effect transistor based sensor for detection of hyoscine n-butyl bromide in its pharmaceutical formulation

Sheibani, S ; Sharif University of Technology | 2020

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  1. Type of Document: Article
  2. Publisher: Center of Excellence in Electrochemistry, Univ. of Tehran , 2020
  3. Abstract:
  4. A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the extended metal gate. In optimal conditions, the linear range for HBB was 10-8-10-5 molL−1 with limit of detection 1.7×10-9 molL-1. The proposed sensor was applied in real sample, it showed fast response with high accuracy, and therefore it could be used as HPLC detector in the pharmaceutical samples in quality control. © 2020 by CEE (Center of Excellence in Electrochemistry)
  5. Keywords:
  6. Hyoscine N-Butyl bromide ; Ion Sensitive Field Effect Transistors sensor ; PVC membrane
  7. Source: Analytical and Bioanalytical Electrochemistry ; Volume 12, Issue 2 , 2020 , Pages 238-249
  8. URL: http://www.abechem.com/article_38717.html