Loading...

A new model for inverse Hall-Petch relation of nanocrystalline materials

Shafiei Mohammadabadi, A ; Sharif University of Technology | 2008

441 Viewed
  1. Type of Document: Article
  2. DOI: 10.1007/s11665-008-9206-8
  3. Publisher: 2008
  4. Abstract:
  5. In the present article, a new model for inverse Hall-Petch relation in nanocrystalline materials has been proposed. It is assumed that lattice distortion along grain boundaries can cause internal stresses and high internal stresses along grain boundaries can promote the grain boundary yielding. The designed model was then verified using the nanocrystalline-copper data. The minimum grain size for inverse Hall-Petch relation is determined to be about 11 nm for Cu. © 2008 ASM International
  6. Keywords:
  7. Hall-Petch equation ; Internal stress ; Yield strength ; Copper ; Crystal growth ; Grain (agricultural product) ; Grain boundaries ; Grain size and shape ; Nanocrystalline alloys ; Nanostructured materials ; Nanocrystalline materials
  8. Source: Journal of Materials Engineering and Performance ; Volume 17, Issue 5 , 2008 , Pages 662-666 ; 10599495 (ISSN)
  9. URL: https://link.springer.com/article/10.1007/s11665-008-9206-8