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Effect of vanadium doping on the electrical and structural properties of GdBa2Cu3-xVxO7-δ

Javanmard, H ; Sharif University of Technology | 2008

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  1. Type of Document: Article
  2. DOI: 10.1002/pssb.200743404
  3. Publisher: 2008
  4. Abstract:
  5. The compounds with composition GdBa2Cu3-xV xO7-δ and x = 0.0, 0.05, 0.1, 0.15, 0.2 and 0.3 have been prepared by the solid-state reaction method. The XRD spectra indicate single-phase formation of the compounds. The transition temperature decreases considerably with vanadium concentration to Tc = 26.4 K for x = 0.3. The host sample is in the orthorhombic phase, but by increasing the V content the structure approaches the tetragonal phase, and for x = 0.3 the structure is nearly tetragonal. The normal state resistivity has been compared with 2D-VRH, 3D-VRH, and CG regimes, which shows that the 2D-VRH and CG are in better agreement for our samples. The localization length is calculated for the 2D-VRH, which shows a decrease with doping, and for x = 0.15 this drop is significant. Based on our preparation conditions, V is likely to remain as V4+ in the compound, and because of the high tendency of V4+ for achieving the octahedral structure, it appears that vanadium enters the chains, and accounts for the observed changes in the crystal structure and the superconducting properties. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA
  6. Keywords:
  7. High-temperature superconductors ; Pseudogap ; Superconductivity
  8. Source: Physica Status Solidi (B) Basic Research ; Volume 245, Issue 8 , 21 July , 2008 , Pages 1611-1617 ; 03701972 (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/10.1002/pssb.200743404