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Roughness of undoped graphene and its short-range induced gauge field
Abedpour, N ; Sharif University of Technology | 2007
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- Type of Document: Article
- DOI: 10.1103/PhysRevB.76.195407
- Publisher: 2007
- Abstract:
- We present both numerical and analytical studies of graphene roughness with a crystal structure including 500×500 atoms. The roughness can effectively result in a random gauge field and has important consequences for its electronic structure. Our results show that its height fluctuations in small scales have a scaling behavior with a temperature dependent roughness exponent in the interval of 0.6<χ<0.7. The correlation function of height fluctuations depends on temperature with a characteristic length scale of ≈90 Å (at room temperature). We show that the correlation function of the induced gauge field has a short-range nature with a correlation length of about 2-3 Å. We also treat the problem analytically by using the Martin-Siggia-Rose method. The renormalization group flows did not yield any delocalized-localized transition arising from the graphene roughness. Our results are in good agreement with recent experimental observations. © 2007 The American Physical Society
- Keywords:
- Materials Science (cond-mat.mtrl-sci) ; Strongly Correlated Electrons (cond-mat.str-el)
- Source: Physical Review B - Condensed Matter and Materials Physics ; Volume 76, Issue 19 , 2007 ; 10980121 (ISSN)
- URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.195407
