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A nonlinear feed-forward memory-less model to fast prediction of threshold voltage in junction-less double-gate MOSFETs

Annabestani, M ; Sharif University of Technology | 2021

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  1. Type of Document: Article
  2. DOI: 10.1002/jnm.2803
  3. Publisher: John Wiley and Sons Ltd , 2021
  4. Abstract:
  5. Decreasing Drain-Induced-Barrier-Lowering (DIBL) is one of the nondesirable short-channel effects, causes the threshold voltage of the transistor to be reduced by increasing the drain voltage. DIBL makes it impossible for engineers to consider VT as a constant, and it is necessary to calculate VT as a function of the drain voltage. Therefore, to consider the DIBL effect in the design of ICs, a large computational burden is imposed on the system, which slows down the simulation process in circuit-level simulators. Accordingly, a Nonlinear Feed-Forward Memory-Less (NFFML) model using the Gram-Schmidt orthogonalization approach is proposed, which calculates the VT of the new generation of MOSFETs, that is, Junctionless Double-Gate MOSFETs (JL-DG-MOSFETs), with high precision and a significant speed-up in the computation of the model. It is shown that the proposed numerical method is 313 times faster than the state-of-the-art analytical model. The normalized MSE is 0.435% on average, showing that the proposed approach can be a fast and accurate candidate for replacing the analytical modeling. © 2020 John Wiley & Sons Ltd
  6. Keywords:
  7. Analytical models ; Circuit simulation ; Numerical methods ; Threshold voltage ; Computational burden ; Double-gate MOSFETs ; Drain-induced barrier lowering ; Gram-Schmidt orthogonalizations ; Memory less model ; Short-channel effect ; Simulation process ; State of the art ; MOSFET devices
  8. Source: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields ; Volume 34, Issue 1 , 2021 ; 08943370 (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/jnm.2803