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Controlling surface statistical properties using bias voltage: Atomic force microscopy and stochastic analysis

Sangpour, P ; Sharif University of Technology | 2005

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  1. Type of Document: Article
  2. DOI: 10.1103/PhysRevB.71.155423
  3. Publisher: 2005
  4. Abstract:
  5. The effect of bias voltages on the statistical properties of rough surfaces has been studied using atomic force microscopy technique and its stochastic analysis. We have characterized the complexity of the height fluctuation of a rough surface by the stochastic parameters such as roughness exponent, level crossing, and drift and diffusion coefficients as a function of the applied bias voltage. It is shown that these statistical as well as microstructural parameters can also explain the macroscopic property of a surface. Furthermore, the tip convolution effect on the stochastic parameters has been examined. © 2005 The American Physical Society
  6. Keywords:
  8. Source: Physical Review B - Condensed Matter and Materials Physics ; Volume 71, Issue 15 , 2005 ; 10980121 (ISSN)
  9. URL: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.71.155423