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Enhancement of Mn luminescence in ZnS:Mn multi-quantum-well structures

Taghavinia, N ; Sharif University of Technology | 2003

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  1. Type of Document: Article
  2. DOI: 10.1063/1.1630376
  3. Publisher: 2003
  4. Abstract:
  5. The efficiency of Mn luminescence is enhanced in low-thickness ZnS:Mn layers. While various hypotheses can be considered to explain the phenomenon, it seems more reasonable to consider the luminescence enhancement effect a result of the formation of dot-like regions with higher local Mn concentration
  6. Keywords:
  7. Luminescence ; Zinc sulfide ; Semiconductor quantum wells ; Semiconductor quantum dots ; Semiconductor doping ; Manganese
  8. Source: Applied Physics Letters ; Volume 83, Issue 22 , 2003 , Pages 4616-4618 ; 00036951 (ISSN)
  9. URL: https://aip.scitation.org/doi/10.1063/1.1630376