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Design & Implement C-band Highly Linear Low Noise Amplifier in GaAs pHEMT Technology

Khaledian, Dyako | 2022

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 55422 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Medi, Ali
  7. Abstract:
  8. Todays the use of microwave integrated circuits for military and commercial applications has gained much attention, especially riththe advent of monolithic microwave integrated circuits, which provide the possibility of fabrication of amplifiers in large number, sufficient accuracy and affordable price.GaAs pHEMT process, because of good characteristics for noise and power in high frequencies, is a good choice for microwave and millimeter wave integrated circuits. A low noise amplifier is a key block in the receiver and, its noise figure, gain and linearity directly affects the sensitivity and dynamic range of the receiver. Hence, a low noise amplifier with low NF, high gain, good return loss, low power dissipation and suitable size is required for many systems. The SPST witch is used to control the signal path.this block, because it is located at the beginning of input path, directly affects the Noise Figure.the block should have minimum loss. In addition, limiters is placed prior to Low Noise Amplifier in order to protect the recievers blocks from high input power. Because of this block is placing before Low Noise Amplifier, loss in limiter increases the noise figure. Design goals for this amplifier were to have gain over 14 dB, input return loss better than 15dB, power capability of 33 dBm,high output linearity and noise figure below 2.5 dB in 7.1-7.7 GHz frequency band.the cascade structure os used in LNA to achieve gain. In this design, a frequency band of 6.7-8.1 GHz is considered to compensate for the changes caused by process elements. Due to the transmitter path, the chip has a SPST to receive the signal from the antenna with minimum Loss and deliver it to Low Noise Amplifier, and when the transmitter path is activated, it does not enter the Low Noise Amplifer.to withstand high power at the input, a power limiter is used that when the input power exceeds a certain alue, the output signal is attenuated and the amplifier is prevented from burning.in this design, ADS electromagnetic analysis tool has been used.this chip was designed and implemented in 0.15 um pHEMT GaAs Process
  9. Keywords:
  10. Low Noise Amplifier (LNA) ; Power Limiters ; Balanced Amplifier ; Linearity ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT) ; Single Pole Double Throw (SPDT)Switch ; Single Pole Single Throw (SPST)Switch

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