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Room temperature diffusion of Cu in vanadium pentoxide thin films

Iraji Zad, A ; Sharif University of Technology | 2002

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  1. Type of Document: Article
  2. DOI: 10.1088/0022-3727/35/11/312
  3. Publisher: Institute of Physics Publishing , 2002
  4. Abstract:
  5. In this paper, we have studied the diffusion process of Cu in V2O5 films at room temperature deposited V2O5 (2000 Å)/Cu/(Si or glass) samples as a function of annealing temperatures in different gas environments. According to our Auger electron spectroscopy, x-ray photoelectron spectroscopy and film resistivity measurements, Cu segregation and accumulation toward the surface of the oxide film were occurred when the vanadium oxide deposited on the Cu buffer layer. The thickness of Cu overlayer was about one monolayer for the deposited samples at room temperature. Annealing treatment at temperatures above 250°C in Ar or N2 (80%) + H2 (20%) environment has enhanced the rate of diffusion process. It is proposed that the diffusion mechanism depends on the nature of applied gases and their pressures
  6. Keywords:
  8. Source: Journal of Physics D: Applied Physics ; Volume 35, Issue 11 , 2002 , Pages 1176-1182 ; 00223727 (ISSN)
  9. URL: https://iopscience.iop.org/article/10.1088/0022-3727/35/11/312/pdf