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A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

Alibeigi, I ; Sharif University of Technology | 2022

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  1. Type of Document: Article
  2. DOI: 10.1109/TMAG.2022.3212690
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2022
  4. Abstract:
  5. As technology size scales down, magnetic tunnel junctions (MTJs) as a promising technology are becoming more and more sensitive to process variation, especially in oxide barrier thickness. Process variation particularly affects the cell resistance and the critical switching current for the smaller dimensions. This article proposes an MTJ cell with one free and two pinned layers, which highly improves the process variation robustness. By employing the spin transfer torque (STT)-spin-Hall effect (SHE) switching method, our proposed MTJ cell improves the switching speed and lowers the switching power consumption. Per simulations, an MRAM cell built with the proposed MTJ cell offers up to 36% lower total power consumption, up to 32% higher write performance, and 35% higher read performance over the previous state-of-the-art MRAMs. Also, the error rate resulting from process variation is 1.4%, which is about one-tenth of the best examples reported in the literature. © 1965-2012 IEEE
  6. Keywords:
  7. In-memory processing (IMP) ; magnetic tunnel junction (MTJ) ; non-volatile memory (NVM) ; process variation ; spin-Hall effect (SHE) ; Cytology ; Electric power utilization ; Magnetic recording ; MRAM devices ; Spin Hall effect ; Switching ; Tunnel junctions ; Free layers ; In-memory processing ; Junction cells ; Magnetic tunnel junction ; Non-volatile memory ; Performance ; Spin-hall effect ; Cells
  8. Source: IEEE Transactions on Magnetics ; Volume 58, Issue 12 , 2022 ; 00189464 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/9913487