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A 6–12 GHz wideband low-noise amplifier GaAs FET design with 0.8-dB average NF and 25-dB gain

Rezaee, S ; Sharif University of Technology | 2022

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  1. Type of Document: Article
  2. DOI: 10.1002/mop.33389
  3. Publisher: John Wiley and Sons Inc , 2022
  4. Abstract:
  5. Low-noise amplifiers (LNAs) with low-noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front-end receivers with a frequency range of 6–12 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field-effect transistor transistor (CE3512K2) because of its good low-noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over the whole operational frequency spectrum of the input/output ports (|S11|<−10 dB, |S22|<−10 dB). Also, output P1dB and input P1dB are, respectively, +4 and −19 dBm for this design. The suggested LNA is suitable for C and X frequency band applications. © 2022 Wiley Periodicals LLC
  6. Keywords:
  7. GaAs FET transistor ; low-noise amplifier ; Binary alloys ; Broadband amplifiers ; Gallium arsenide ; High electron mobility transistors ; III-V semiconductors ; Microwave amplifiers ; Noise figure ; Semiconducting gallium ; Average NF ; Communications systems ; Critical component ; Gaas FET transistor ; GaAs-FET ; Low noise performance ; Low noiseamplifier ; Microwave applications ; Performance ; Wideband low-noise amplifier ; Low noise amplifiers
  8. Source: Microwave and Optical Technology Letters ; Volume 64, Issue 11 , 2022 , Pages 1883-1887 ; 08952477 (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.33389