Analysis of Damages Resulting From Plasma-Based Processes and Ion Implantation in Semiconductors, Insulators and Metals Used in Integrated Circuits

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Masroor, Mohammad | 2024

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 57072 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Rashidian, Bizhan
Abstract:
In this thesis, the effect of radiation created in processes such as ion implantation and plasma on different types of semiconductor devices has been investigated. In the first part, after presenting the basic concepts, the basics of the interaction of energetic particles with semiconductor devices and elements used in integrated circuits have been discussed, and the damage threshold in each type of these devices has been summarized, then in the second part, according to Due to the necessity of revealing energetic particles, the methods of doing this work have been compared with each other from the point of view of engineering. In the third and fourth sections, after presenting the Monte Carlo simulation methods and comparing them with each other, simulation on the interaction of particles and types of damage. It has been done on semiconductors, the results of which have been evaluated with the given references, and in addition, circuits for detecting high-energy particles based on the ring oscillator have been simulated, designed and implemented
Keywords:
Radiation Damage ; Bremsstrahlung Radiation ; Ring Oscillator ; Semiconductor Detectors ; Particles With Matter Interaction ; Ring Oscillator Semiconductor Detector

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