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Analysis of Single Electron Transistor with Metallic Island and its Application in Logic Circuits

Tavassoli, Hesam | 2009

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 40803 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Faez, Rahim; Bagheri Shouraki, Saeed
  7. Abstract:
  8. As the traditional MOSFET is reaching to its scaling limit, it is crucial to find an alternative. Single Electron Devices have shown promising features, such as nano-scale dimensions and extremely low power consumption that can lead to new generation of integrated circuits. In this thesis we have presented an analytical study of metallic single electron devices, particularly single electron transistors (SET). We have illustrated our study with some major logic applications of SET. The main goal of this thesis is to develop simulation software for single electron circuits, comparable with the well-known commercial software “SIMON”, which can provide steady-state and transient analysis of the circuit. Using the Monte Carlo approach (method), we developed a software named “NASHAT”. In addition to its desired features, NASHAT has some new options and it can analyze non-linear circuits as well. Using NASHAT, we simulated the single electron inverter as the fundamental block of logic circuits. In the next step, putting three single electron inverters in a loop, a three stage ring oscillator was simulated and the output response of the circuit was extracted. In each circuit, the influences of the main parameters (temperature, capacitor, tunneling resistor) were simulated and discussed. To illustrate the new features of our software, a non-linear model for silicon-SET was simulated. The simulation results were in excellent agreement with the published experimental data. A brief study of different fabrication methods of SET (with both metal and semiconductor) and the resulting electrical propertied were provided in the appendix.
  9. Keywords:
  10. Monte Carlo Method ; Ring Oscillator ; Master Equation ; Single Electron Transistor ; Simulation Methods ; Single Electron Inverter

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